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Stress Reduction of Amorphous Silicon Deposited by PECVD

Published online by Cambridge University Press:  02 March 2016

César B. Pérez  and
C. Reyes-Betanzo
César B. Pérez
Affiliation:
National Institute for Astrophysics, Optics and Electronics, P.O. Box 72840, Puebla, Mexico.
C. Reyes-Betanzo
Affiliation:
National Institute for Astrophysics, Optics and Electronics, P.O. Box 72840, Puebla, Mexico.
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Abstract

Amorphous silicon (α-Si) was deposited on glass substrates by PECVD at different deposition conditions in order to characterize the residual stress on the film. Subsequently, a thermal-annealing was applied for different times at 400 °C in a N2 atmosphere, aiming to reduce the stress in the films. The deposition power was between 15 and 30 W at 13.56 MHz, the pressure in the chamber was adjusted in a range from 600 to 900 mTorr, and the temperature was varied from 140 to 200 °C. The stress was determined by using the Stoney equation, measuring the curvature and thickness of the α-Si films with a stylus profilometer. A deposition rate between 7-24 nm/min was obtained, and the time for thermal-annealing needed to reduce the stress was reduced from 10 to 2-4 h, obtaining a minimum compressive stress of 17 MPa. With this value of stress, it was possible to use the α-Si as masking material for wet etching of glass during the manufacturing of microfluidic devices, in order to obtain microstructures in the glass with 150 μm in depth.

Keywords

AmorphousThermal stressesPlasma-enhanced CVD (PECVD) (deposition)
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1812: Symposium 6B – Advanced Structural Materials—2015 , 2016 , pp. 109 - 116
Copyright
Copyright © Materials Research Society 2016 

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References

REFERENCES

Yan, W., Tao, Z., Ong, T.M.B and Gu, M.., Appl. Phys. Lett. 106, 93902 (2015).CrossRefGoogle Scholar
Chen, J., Cranton, W. and Fihn, M., Handbook of Visual Display Technology (Springer, 2012).CrossRefGoogle Scholar
Iliescu, C., Jing, J., Tay, F.E.H., Miao, J. and Sun, T., Surf. Coat. Technol. 198, 314–318 (2005).CrossRefGoogle Scholar
Iliescu, C. and Chen, B., J. Micromech. Microeng. 18, 15024 (2008).CrossRefGoogle Scholar
Hutchinson, J.W., Notes for a DCAMM Course, Technical University of Denmark, Lyngby, 1996.Google Scholar
Stoney, G.G., Proc. R. Soc. London Ser. A 82,172–175 (1909).CrossRefGoogle Scholar
Madan, A., J. Non Cryst. Solids 352, 881–886 (2006).CrossRefGoogle Scholar
Kondo, M., Toyoshima, Y., Matsuda, A. and Ikuta, K., J. Appl. Phys. 80, 6061–6063 (1996).CrossRefGoogle Scholar
Iliescu, C., Miao, J. and Tay, F.E.H., Sens. Actuators A 117, 286–292 (2005).CrossRefGoogle Scholar