Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-15T19:42:01.314Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural and Electrical Characterization of B-Doped Microcrystalline Silicon thin Films

Published online by Cambridge University Press:  01 February 2011

R. Saleh  and
N. H. Nickel
R. Saleh
Affiliation:
Jurusan Fisika, Fakultas MIPA, Universitas Indonesia, 16424 Depok, Indonesia
N. H. Nickel
Affiliation:
Hahn-Meitner-Institut Berlin, Kekulèstr.5, 12489 Berlin, Germany
Get access

Abstract

In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (XC ~55 %).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 715: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2002 , 2002 , A20.6
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Beyer, W., Herion, J., Wagner, H. and Zastrow, U., Pilos. Mag. B 63, 269 (1991)Google Scholar
2 Furukawa, S. and Miyasato, T., Phys. Rev. B38, 5726 (1988)Google Scholar
3 Veprek, Iqbal S., Webb, A.P. and Capezzuto, P., Solid State Comm. 37, 993 (1981)Google Scholar
4 Brogueira, P., Chu, V., Ferro, A.C. and Conde, J.P., J. Vac. Sci. Technol. A15, 2968 (1997)Google Scholar
5 Flückiger, R., Meier, J., Shah, A., Catana, A., Brunel, M., Nguyen, H.Y., Collins, R.W. and Carius, R., Mat. Res. Soc. Symp. Proc. Vol 336, 511 (1994)Google Scholar
6 Beyer, W., in: Hydrogen in Semiconductors II, Nickel, Norbert H., ed. (Academic Press, New York, 1999), p165 Google Scholar
7 Cardona, M., Phys. Status Solidi B 118, 463 (1983)Google Scholar
8 Das, D., Jana, M. and Barua, A.K., J. Appl. Phys. 89, 3041 (2001)Google Scholar
9 Tzolov, M., Jeliazova, Y., Carius, R., Houben, L., Finger, F. and Tzenov, N., Solid State Phenomena 67-68, 107 (1999)Google Scholar
10 Jackson, W.B., Franz, A., Chabal, Y., Weldon, M.K., Jin, H.C. and Abelson, J.R., Mat. Res. Soc. Symp. Proc. Vol 513, 381 (1998)Google Scholar
11 Finger, F., Prasad, K., Dubail, S., Shah, A., Tang, X.M., Weber, J. and Beyer, W., Mat. Res. Soc. Symp. Proc. Vol 219, 383 (1991)Google Scholar
12 Beyer, W., Physica B170, 105 (1991)Google Scholar
13 Beyer, W., Solid State Comm. 39, 375 (1981)Google Scholar