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Structural, optical and electrical properties of GaN films grown by metalorganic chemical vapor deposition on sapphire.

Published online by Cambridge University Press:  21 March 2011

P. Visconti ,
M. A. Reshchikov ,
F. Yun ,
K. M. Jones ,
H. Morkoç ,
A. Passaseo ,
E. Piscopiello ,
A. Pomarico ,
R. Cingolani  and
M. Lomascolo
...Show all authors
P. Visconti
Affiliation:
Istituto Nazionale di Fisica della Materia, Unita' di Lecce and Dipartimento di Ingegneria dell'Innovazione, Universita' di Lecce, 73100, Lecce, ITALY Istituto per lo Studio di Nuovi Materiali per l'Elettronica, CNR, Via Arnesano, 73100, Lecce, ITALY
M. A. Reshchikov
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA, 23284
F. Yun
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA, 23284
K. M. Jones
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA, 23284
H. Morkoç
Affiliation:
Virginia Commonwealth University, Dept. of Electrical Engineering, Richmond, VA, 23284
A. Passaseo
Affiliation:
Istituto Nazionale di Fisica della Materia, Unita' di Lecce and Dipartimento di Ingegneria dell'Innovazione, Universita' di Lecce, 73100, Lecce, ITALY
E. Piscopiello
Affiliation:
Istituto Nazionale di Fisica della Materia, Unita' di Lecce and Dipartimento di Ingegneria dell'Innovazione, Universita' di Lecce, 73100, Lecce, ITALY
A. Pomarico
Affiliation:
Istituto Nazionale di Fisica della Materia, Unita' di Lecce and Dipartimento di Ingegneria dell'Innovazione, Universita' di Lecce, 73100, Lecce, ITALY
R. Cingolani
Affiliation:
Istituto Nazionale di Fisica della Materia, Unita' di Lecce and Dipartimento di Ingegneria dell'Innovazione, Universita' di Lecce, 73100, Lecce, ITALY
M. Lomascolo
Affiliation:
Istituto per lo Studio di Nuovi Materiali per l'Elettronica, CNR, Via Arnesano, 73100, Lecce, ITALY
M. Catalano
Affiliation:
Istituto per lo Studio di Nuovi Materiali per l'Elettronica, CNR, Via Arnesano, 73100, Lecce, ITALY
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Abstract

Properties of GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on c-plane of sapphire have been investigated using atomic force microscopy (AFM), wet etching for defect investigation, transmission electron microscopy (TEM), high-resolution X-ray diffraction, Hall effect measurements and low-temperature photoluminescence (PL). Tapping-mode AFM images of the as-grown samples showed atomically smooth surfaces (rms roughness ≍ 0.2 nm) consisting of terraces separated by about 3Å bi-layer steps. Hot H3PO4 chemical etching was used to produce hexagonal-shaped etch pits at the surface defect sites as revealed by AFM imaging. The obtained etch pit densities (9×108 - 2 ×109 cm−2) were in agreement with the dislocation density found by plan-view and cross-sectional TEM observations. The full-width at half-maximum (FWHM) of the X-ray diffraction rocking curve was about 4.8 and 3.9 arcmin for the symmetric (002) and asymmetric (104) directions, respectively. PL spectrum at 15 K demonstrated sharp peaks (FWHM ≍ 4 meV) in the excitonic region, which were attributed to free and bound excitons. The spectrum contained also weak PL bands with maxima at about 2.2, 2.9 and 3.27 eV, which have been attributed to three different acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E3.8
Copyright
Copyright © Materials Research Society 2001

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References

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