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The Structure of a-Si:H,F/a-Si,Ge:H,F Interfaces*)

Published online by Cambridge University Press:  26 February 2011

J. P. Conde ,
D.-S. Shen ,
I. H. Campbell ,
P. M. Fauchet  and
S. Wagner
J. P. Conde
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
D.-S. Shen
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
I. H. Campbell
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
P. M. Fauchet
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
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Abstract

We study the interface between un-alloyed a-Si:H,F and an a-Si0.4,Ge0.6:H,F alloy using superlattice structures. From infrared spectroscopy we estimate a width of 8 A for the excess hydrogen layer, and X-ray diffraction data give us a width of 2Å contributing to the width of the diffraction peak. Vibrational Raman scattering data show that the ratios of the number of Si-Si, Ge-Ge and Si-Ge bonds is not altered by changing the number of interfaces. This fact allows us to establish an upper limit for the interface width of 3 atomic layers, i.e. one layer in each partner plus an intermediate layer.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 629
Copyright
Copyright © Materials Research Society 1987

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Footnotes

*)

Work supported by the Electric Power Research Institute

References

REFERENCES

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