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Studies of Electrical Polarization Fatigue in SrBi2Ta2O9 Thin Films

Published online by Cambridge University Press:  10 February 2011

K. M. Lee
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
D. Thomas
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
S. H. Kim
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
J. P. Maria
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, USA
H. M. Jang
Affiliation:
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
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Abstract

The polarization suppression and electrical properties directly associated with the electrical polarization fatigue in SrBi2Ta2O9system were systematically investigated using Pt/SBT/Pt capacitors. Three general observations were made after 109 switching cycles: (i) ∼95% of the remanent polarization was conserved, (ii) both high and zero bias field capacitance decreased, and (iii) leakage current density increased from approximately 10−7 to 10−5 A/cm2at ∼30kV/cm2. In addition, the “knee” field, at which the leakage abruptly increases, assumed smaller values with cumulative switching cycles. Temperature dependent leakage data was collected for both as-deposited and field-cycled samples. Based on these results, we propose the possibilities of enhanced concentration of charge carriers or additional reductions in interfacial conduction barriers. Motion of oxygen vacancies to less-shallow energy levels near electrode/ferroelectric interface may allow this mechanism to occur.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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