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Studies of the Coefficient of Thermal Expansion of Low-k ILD Materials by X-Ray Reflectivity

Published online by Cambridge University Press:  01 February 2011

George Andrew Antonelli ,
Tran M. Phung ,
Clay D. Mortensen ,
David Johnson ,
Michael D. Goodner  and
Mansour Moinpour
George Andrew Antonelli
Affiliation:
george.a.antonelli@intel.com, Intel Corporation, Assembly Capital Equipment Development, 5000 W. Chandler Blvd., Mailstop CH3-111, Chandler, AZ, 85226, United States, (480) 552-5641, (480) 554-1343
Tran M. Phung
Affiliation:
tphung@uoregon.edu, University of Oregon, Chemistry Department, 1253 University of Oregon, Eugene, OR, 97403, United States
Clay D. Mortensen
Affiliation:
cmortens@darkwing.uoregon.edu, University of Oregon, Chemistry Department, 1253 University of Oregon, Eugene, OR, 97403, United States
David Johnson
Affiliation:
davej@uoregon.edu, University of Oregon, Chemistry Department, 1253 University of Oregon, Eugene, OR, 97403, United States
Michael D. Goodner
Affiliation:
michael.d.goodner@intel.com, Intel Corporation, Fab Materials Operations, 5200 NE. Elam Young Parkway, Hillsboro, OR, 97124, United States
Mansour Moinpour
Affiliation:
mansour.moinpour@intel.com, Intel Corporation, Fab Materials Operations, 2200 Mission College Blvd., Santa Clara, CA, 95054, United States
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Abstract

The electrical and mechanical properties of low-k dielectric materials have received a great deal of attention in recent years; however, measurements of thermal properties such as the coefficient of thermal expansion remain minimal. This absence of data is due in part to the limited number of experimental techniques capable of measuring this parameter. Even when data does exist, it has generally not been collected on samples of a thickness relevant to current and future integrated processes. We present a procedure for using x-ray reflectivity to measure the coefficient of thermal expansion of sub-micron dielectric thin films. In particular, we elucidate the thin film mechanics required to extract this parameter for a supported film as opposed to a free-standing film. Results of measurements for a series of plasma-enhanced chemical vapor deposited and spin-on low-k dielectric thin films will be provided and compared.

Keywords

x-ray reflectivitydielectricsuperconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F11-02
Copyright
Copyright © Materials Research Society 2006

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References

references

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