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Surface Morphologies and Optical Properties of Homoepitaxial ZnO Grown by Close-Spaced Chemical Vapor Transport

Published online by Cambridge University Press:  01 February 2011

Koji Abe ,
Tetsuya Tokuda ,
Yuta Banno  and
Osamu Eryu
Koji Abe
Affiliation:
abe@nitech.ac.jp, Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso Showa, Nagoya, 466-8555, Japan
Tetsuya Tokuda
Affiliation:
tokuda@laserion-lab.nitech.ac.jp, Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa, Nagoya, 466-8555, Japan
Yuta Banno
Affiliation:
banno@laserion-lab.nitech.ac.jp, Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa,, Nagoya, 466-8555, Japan
Osamu Eryu
Affiliation:
eryu@nitech.ac.jp, Nagoya Institute of Technology, Department of Electrical and Electronic Engineering, Gokiso, Showa, Nagoya, 466-8555, Japan
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Abstract

Chemical vapor transport (CVT) using carbon as a transporting agent is studied for homoepitaxial growth on O-polar ZnO substrates. To increase growth rate at high temperatures, we keep a substrate close to ZnO source powder. Surface smoothness and crystal quality of epilayers are remarkably improved by increasing a substrate temperature. Smooth surfaces are observed on the epilayer grown at substrate temperatures above 920°C.

Keywords

semiconductingoxidefilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1012: Symposium Y – Thin-Film Compound Semiconductor Photovoltaics-2007 , 2007 , 1012-Y03-25
Copyright
Copyright © Materials Research Society 2007

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