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Synthesis and Electronic Application of Germanium Nanocrystals in Silicon Oxide Matrix

Published online by Cambridge University Press:  01 February 2011

Wee Kiong Choi ,
Wai Kin Chim  and
Han Guan Chew
Wee Kiong Choi
Affiliation:
elechoi@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore, 65-65166473, 65-6779103
Wai Kin Chim
Affiliation:
elecwk@nus.edu.sg, National University of Singapore, Electrical and Computer Engineering, 4 Engineering Drive 3, Singapore, 117576, Singapore
Han Guan Chew
Affiliation:
g0308000@nus.edu.sg, National University of Singapore, Singapore-MIT Alliance, 4 Engineering Drive 3, Singapore, 117576, Singapore
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Abstract

The size of germanium (Ge) nanocrystals in a trilayer memory device structure was controlled by varying the thickness of the middle co-sputtered Ge plus silicon oxide layer. Such confinement of nanocrystals was not effective in a trilayer structure with a pure Ge middle layer. Significant diffusion of Ge atoms through the tunnel oxide or rapid thermal oxide (RTO) layer and into the silicon substrate was observed when the RTO layer thickness of the trilayer structure was reduced. This resulted in no (or very few) nanocrystals formed in the system. A higher charge storage capability was obtained from devices with a thinner RTO layer.

Keywords

Genanostructureself-assembly
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 959: Symposium M – Quantum Dots—Growth, Behavior and Applications , 2006 , 0959-M17-15
Copyright
Copyright © Materials Research Society 2007

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References

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