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TEM measurement of hydrogen pressure within a platelet

Published online by Cambridge University Press:  21 March 2011

J. Grisolia ,
G. Ben Assayag ,
B. de Mauduit ,
A. Claverie ,
R.E. Kroon  and
J.H. Neethling
J. Grisolia
Affiliation:
CEMES/CNRS, BP 4347, F-31055 Toulouse
G. Ben Assayag
Affiliation:
CEMES/CNRS, BP 4347, F-31055 Toulouse
B. de Mauduit
Affiliation:
CEMES/CNRS, BP 4347, F-31055 Toulouse
A. Claverie
Affiliation:
CEMES/CNRS, BP 4347, F-31055 Toulouse
R.E. Kroon
Affiliation:
Physics Department, PO Box 1600, University of Port Elizabeth, South Africa
J.H. Neethling
Affiliation:
Physics Department, PO Box 1600, University of Port Elizabeth, South Africa
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Abstract

Proton implantation and thermal annealing of silicon result in the formation of a specific type of extended defect involving hydrogen, named “platelets”. These defects have been related to the exfoliation mechanism on which a newly developed process to transfer thin films of silicon onto various substrates is based. In a previous paper, we have shown that these platelets undergo a quasi-conservative Ostwald ripening upon annealing. The measurement of the pressure within such pressurised gas-filled cavities is important to understand and simulate both the growth of these defects and the exfoliation mechanism. To extract this pressure from TEM studies, we have developed and tested an analogy between the platelets and a well-known 2D defect: a dislocation loop. The comparison between simulations of the image of the strain field surrounding a fictitious dislocation loop and experimental TEM images of the platelets shows that the platelets can be described by a Burgers vector of about 0.6nm. Moreover, this vector can be used to deduce the pressure of the molecular hydrogen within a platelet. A typical value of 10 GPa is found for a platelet of 20 nm in diameter at room temperature. Consequently, the atomic density of hydrogen within a platelet and the total number of hydrogen trapped by a population of platelet can be calculated and give reasonable values when compared to the implanted dose.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I3.2
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1 - Bruel, M., Electron. Lett., 31 (14), (1995), 1201.Google Scholar
2 - Aspar, B., Lagahe, C., Moriceau, H., Soubie, A., Bruel, M., Auberton-Hervé, A.J., Barge, T. and Maleville, C., Mat. Res. Soc. Symp. Proc., V510, (1998), 381,.Google Scholar
3 - Grisolia, J., Laanab, L., Aspar, B., Lagahe, C., Assayag, G. Ben, Claverie, A., Appl. Phys. Lett., Vol 76 (7), (2000), 852.Google Scholar
4 - Grisolia, J., Cristiano, F., Mauduit, B. De, and Assayag, G. Ben, Letertre, F., Aspar, B., Cioccio, L. Di, Claverie, A., Journal of Appl. Phys, 87 (12) (2000) 8415.Google Scholar
5 - Aspar, B., Lagahe, C., Jalaguier, E., Soubie, A., Biasse, B., Papon, A.M., Grisolia, J., Claverie, A., Barge, T., Letertre, F.. IIT Proceedings, 2000, in press.Google Scholar
6 - Radi, G., Acta. Cryst. (1970), A26, 41.Google Scholar
7 - Kroon, R. E., Neethling, J. H, Afr, S.. J. Sci., 95, (1999) 349.Google Scholar
8 - Hirth, J. P., Lothe, J., Theory of dislocations, McGraw-Hill, New York (1968).Google Scholar
9 - Madelung, O., Semiconductors-Basic Data, Springer-Verlag, Berlin (1996).Google Scholar
10 - Ardren, S.P., Ball, C.A.B, Neethling, J.H. and Snyman, H.C., J. Appl. Phys. 60, (1986), 695 Google Scholar
11 - Botha, J. R., Kroon, R.E. and Neethling, J.H., Proc. Microsc. Soc. South Afr. 27, (1997)Google Scholar
12 - Kroon, R.E.. and Neethling, J.H., Proc. 14th Int. Cong. on Electron Microscopy (1998), 51 Google Scholar
13 - Muto, S., Takeda, S., Hirata, M., Tanabe, T., J. Appl. Phys. 70, (1991) 3505.Google Scholar
14 - Muto, S., Takeda, S., Phil. Mag., 72, (1995) 99.Google Scholar
15 - Muto, S., Takeda, S., Hirata, M., Material Science Forum 1171, ((1995) 196.Google Scholar
16 - Grisolia, J., Cristiano, F., BenAssayag, G., Claverie, A., Nucl. Instr. And Meth. in Phys. Res. B (2001), in press.Google Scholar