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Temperature Dependence of Stresses and H Desorption in Porous Silicon

Published online by Cambridge University Press:  28 February 2011

Y. Diawara ,
J.F. Currie ,
A. Yelon ,
V. Petrova-Koch  and
A. Nikolov
Y. Diawara
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
J.F. Currie
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
A. Yelon
Affiliation:
Ecole Polytechnique, Département de génie physique, Groupe des Couches Minces, C.P.6079, Succ. Centre-Ville, Montréal, Qc, Canada, H3C 3A7.
V. Petrova-Koch
Affiliation:
Physik-Department E 16, Tech. Univ. Munchen, 8046 Garching, Germany.
A. Nikolov
Affiliation:
Physik-Department E 16, Tech. Univ. Munchen, 8046 Garching, Germany.
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Abstract

The mechanical stress induced in as-prepared porous silicon is generally compressive. Upon thermal annealing, the stress shows hysteresis. Isothermal annealing reveals second-order kinetic processes for both the stress and hydrogen effusion. The correlations between the changes in stress and porous silicon composition and structure are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 555
Copyright
Copyright © Materials Research Society 1995

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References

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