Hostname: page-component-745bb68f8f-b95js Total loading time: 0 Render date: 2025-01-15T06:19:19.800Z Has data issue: false hasContentIssue false
  • English
  • Français

Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon

Published online by Cambridge University Press:  01 February 2011

J. Whitaker  and
P. C. Taylor
J. Whitaker
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, 115 South 1400 East Room 201, Salt Lake City UT 84112-0830
Get access

Abstract

We report the temperature dependence of the growth and decay of the optically induced electron spin resonance (LESR) on short and long time scales (10-3 s < t < 2500 s). This range of times spans the region between previously published photoluminescence and the LESR data. In addition, we examine the steady-state density of optically excited charge carriers as a function of temperature. These measurements lead to a better understanding of the band tail structure of amorphous silicon as well as the kinetics of the excitation and recombination processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A2.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shklovskii, B. I., Fritzche, H., and Baranovskii, S. D., Phys. Rev. Lett. 62, 2989 (1989).Google Scholar
2. Shultz, N., Yan, B., Efros, A. L., and Taylor, P.C., J. Non-Cryst. Solids 266-269, 372–375 (2000).Google Scholar
3. Whitaker, J., Su, T., and Taylor, P.C., Mat. Res. Soc. Symp. Proc. 715, 275–281 (2002).Google Scholar
4. Street, R.A., Hydrogenated Amorphous Silicon (Cambridge University Press, Cambridge, 1991).Google Scholar
5. Yan, B., Schultz, N. A., Efros, A. L., and Taylor, P. C., Phys. Rev. Lett. 84, 4180 (2000).Google Scholar
6. Yan, B. and Taylor, P. C., MRS Symp. Proc. 507, 805 (1998).Google Scholar
7. Street, R. A. and Biegelsen, D. K., Solid State Commun. 33, 1159 (1980); R. A. Street and D. K. Biegelsen, Solid State Commun. 44, 501 (1982).Google Scholar