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Theoretical Analysis of Thermal Conductivity in Amorphous Inter-layer Dielectrics

Published online by Cambridge University Press:  01 February 2011

Manu Shamsa ,
Patrick Morrow  and
Shriram Ramanathan
Manu Shamsa
Affiliation:
manu@ee.ucr.eduUC RiversideElectrical EngineeringRiversideCA 92521United States
Patrick Morrow
Affiliation:
patrick.morrow@intel.com, Intel, Components Research, Hillsboro, OR, 97124, United States
Shriram Ramanathan
Affiliation:
shriram@deas.harvard.edu, Intel, Components Research, Hillsboro, OR, 97124, United States
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Abstract

Understanding thermal conduction in interlayer dielectrics (ILDs) is important for the optimal design of interconnect layers in backend semiconductor processing for future high-performance nano-scale devices. Reduced thermal conductivity of porous ILDs for example can adversely affect the temperature rise in the embedded metal lines leading to un-desirable reliability issues and design constraints. In this paper, we report results of our theoretical and experimental investigation of thermal transport in amorphous and porous dielectrics. A phonon-hopping model has been adapted to calculate the thermal conductivity in disordered materials. The value of hopping integral has been calculated by comparing the modeling results with experimental data for various amorphous and porous materials. The model shows reasonable agreement with experimental data for various amorphous materials including SiO2 and other glasses over a wide temperature range from 50K – 300K. The model suggests that the hopping of localized high frequency phonons is a dominant thermal transport mechanism in such material systems.

Keywords

dielectricthermal conductivityamorphous
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F03-01
Copyright
Copyright © Materials Research Society 2006

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