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Thermal and Dielectric Stability of Parylene X

Published online by Cambridge University Press:  01 February 2011

Jay J. Senkevich ,
Brad Carrow  and
Pei-I Wang
Jay J. Senkevich
Affiliation:
jsenkevich@brewerscience.com, Brewer Science Inc., n/a, 2401 Brewer Drive, Rolla, MO, 65401, United States
Brad Carrow
Affiliation:
trapskeetman@hotmail.com, Brewer Science Inc., 2401 Brewer Drive, Rolla, MO, 65401, United States
Pei-I Wang
Affiliation:
wangp3@rpi.edu, Rensselaer Polytechnic Institute, Center for Integrated Electronics, 110 8th St., Troy, NY, 12180, United States
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Abstract

Integrating pore sealing and barrier dielectric materials into back-end-of-the-line (BEOL) structures is challenging due to the requirements of high thermal stability, electrical stability (high breakdown, low leakage, and low dielectric constant), and barrier-like properties of the films. With Al etch-back metallization the dielectric needed to be stable to 450 °C due to Al reflow but now the thermal budget is shrinking with Cu metallization. Now the limiting factors are solder and ultra-low k (ULK) dielectric cure temperatures. These temperatures may still require thermal anneals exceeding 400 °C, which is very demanding on organic-based systems. Parylene X, a pore sealing chemical vapor depositable polymer, is deposited a room temperature via a precursor that allows the polymer to be self-initiated and without any by-products. The deposition platform allows controlled penetration of the organic polymer that allows significant fracture toughness improvement for the ULK dielectric. The polymer starts to cross-link at 175 °C with full conversion by 380 °C as measured by FT-IR spectroscopy. The polymer is shown to be stable to 420 °C with a dielectric constant of 2.7 and a leakage current of 0.5 × 10-9 A/cm2 at 0.67 MV/cm using MIMCAP structures. Parylene × was shown to have barrier-like properties in contact with both Ta and Cu metallization using bias-temperature stress (BTS) measurements at 0.5 MV/cm and 150 °C. In a Cu/Ta/parylene X/ULK dielectric stack, Ta a carbide former, can be used as an adhesive layer linking Cu to parylene × or the organic-based surface since parylene × has barrier-like properties.

Keywords

polymerbarrier layerelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F03-06
Copyright
Copyright © Materials Research Society 2006

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