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Thermal Stability of Ir-Silicide/SiGe Layers Grown in a Dual Electron Gun Chamber at Ultra-High Vacuum (Extended Abstract)

Published online by Cambridge University Press:  15 February 2011

C. K. Chung  and
J. Hwang
C. K. Chung
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Taiwan, R. O. C.
J. Hwang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Taiwan, R. O. C.
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Abstract

Heteroepitaxial Ir-silicide/SiGe layers on the top of p-Si(100) have been achieved at a substrate temperature of 450 °C. The co-deposited Ir-silicide layer was determined to be Ir3Si4 with four types of epitaxial modes. Thermal stability of the film was examined by using Auger electron spectroscopy and X-ray diffractometer. The Ir3Si4/SiGe layers were stable as annealed at 550 °C for 20 sec in a rapid thermal annealing furnace, while interdiffusion between Ir3Si4 and SiGe occurs at a temperature of 750 deg;C or higher for 20 sec. The traditional guard-ring fabrication process should be performed before epitaxial films deposition due to this thermal instability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 299: Symposium C2 – Infrared Detectors--Materials, Processing, and Devices , 1994 , 319
Copyright
Copyright © Materials Research Society 1994

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