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Time-Resolved Photoluminescence Measurements of In0.15Ga0.85N/In0.015Ga0.985N Quantum Wells with Si-doped Barriers

Published online by Cambridge University Press:  17 March 2011

Mee-Yi Ryu ,
Young Jun Yu ,
Phil Won Yu ,
Eun-joo Shin ,
Eunsoon Oh ,
Chul Soo Sone ,
Ok Hyun Nam  and
Yong Jo Park
Mee-Yi Ryu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, South Korea
Young Jun Yu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, South Korea
Phil Won Yu
Affiliation:
Dept. of Information and Communications, Kwangju Institute of Science and Technology, Kwangju 500-712, South Korea
Eun-joo Shin
Affiliation:
Optoelectronics Group, Korea Research Institute of Standards and Science, Taejon 305-600, South Korea
Eunsoon Oh
Affiliation:
BK21 Physics Research Division, Seoul National University, Seoul 151-742, South Korea
Chul Soo Sone
Affiliation:
Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, South Korea
Ok Hyun Nam
Affiliation:
Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, South Korea
Yong Jo Park
Affiliation:
Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, South Korea
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Abstract

A systematic study of photoluminescence (PL) and time-resolved PL spectra from In0.15Ga0.85N/In0.015Ga0.985N quantum wells (QWs) with different Si doping concentration in the barriers has been carried out. As the Si doping concentration increases, the PL emission intensity was increased and the PL peak energy was blueshifted. The energy separation between the spontaneous emission (SPE) and stimulated emission (SE) peaks decrease with increasing Si doping concentration. We also observed that the slow decay time τ2 in the QWs decreases with increasing Si doping concentration, from ∼ 130 ns for [Si] = 2 × 1018 cm−3 to ∼ 30 ns for [Si] = 1 × 1019 cm−3. The PL emission peak shifts to lower energies with delay time after a pulsed excitation and this shift decreases with increasing Si doping concentration. The increased recombination rate, the decrease of peak shift with delay time, and the reduced separation between the SPE and SE peaks with increasing Si doping concentration are attributed to the screening of piezoelectric field by carriers originated from Si doped barriers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G9.10
Copyright
Copyright © Materials Research Society 2001

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References

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