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Transient and modulated photoconductivity in microcrystalline silicon

Published online by Cambridge University Press:  21 March 2011

R. Brüggemann ,
C. Longeaud  and
J.P. Kleider
R. Brüggemann
Affiliation:
Institut für Physik, Carl von Ossietzky Universität Oldenburg, 263111 Oldenburg. Germany
C. Longeaud
Affiliation:
L.G.E.P. -SUPELEC (CNRS. UMR 8507), 11 Rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
J.P. Kleider
Affiliation:
L.G.E.P. -SUPELEC (CNRS. UMR 8507), 11 Rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
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Abstract

We report on transient and modulated photoconductivity experiments with undoped michrystalline silicon in which access to density-of-states information is limited because the Fermi level results in occupancy of localised states in the energy range which is scanned. Simulation results show that a defect peak will be masked if most of the distribution is occupied because of the Fermi level position and the density-of-states determined from the experimental data is not an image of the true distribution. Another difficulty with obtaining reliable density-of-states distributions in microcrystalline silicon is the metastability of samples with respect ot adsorption of gases. If dark-conductivity changes are large upon heat treatment in vacuum, the modulated and transient photocurrent response are also affected to a large degree and the density-of-states profiles apart form being influenced by the Fermi level position thus also depend on the thermal history of the sample.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A9.8
Copyright
Copyright © Materials Research Society 2004

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References

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