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Transient Current Behavior of Vertically Integrated Amorphous Silicon Diodes

Published online by Cambridge University Press:  01 February 2011

Gregory Choong ,
Nicolas Wyrsch ,
Christophe Ballif ,
Rolf Kaufmann  and
Felix Lustenberger
Gregory Choong
Affiliation:
gregory.choong@unine.ch, Institute of Microtechnology, PVLab, A.-L. Breguet 2, Neuchatel, 2000, Switzerland, 0041 32 718 33 43, 0041 32 718 32 01
Nicolas Wyrsch
Affiliation:
nicolas.wyrsch@unine.ch, Institute of Microtechnology, Breguet 2, Neuchatel, 2000, Switzerland
Christophe Ballif
Affiliation:
christophe.ballif@unine.ch, Institute of Microtechnology, Breguet 2, Neuchatel, 2000, Switzerland
Rolf Kaufmann
Affiliation:
rolf.kaufmann@csem.ch, CSEM, Badenerstrasse 569, Zurich, 8048, Switzerland
Felix Lustenberger
Affiliation:
felix.lustenberger@csem.ch, CSEM, Badenerstrasse 569, Zurich, 8048, Switzerland
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Abstract

Monolithic image sensors based on Thin Film on CMOS (TFC) Technology are becoming more and more attractive as an alternative solution to conventional active pixel sensors (APS). Imager with high sensitivity, high dynamic coupled with low dark current values (10-100 pA/cm2 @ 104 V/cm) have been developed. However, issues such as light-induced degradation and image lag hinder the commercial development of a-Si:H based image sensors. The problem of image lag is caused by residual current due to the release of trapped charges after the switch off of the illumination.

In this paper, we present a comprehensive study of the transient behavior of the photocurrent in a-Si:H photodiodes deposited on glass, as well as in corresponding diodes implemented in a TFC image sensor when illumination is switched off or periodically varied. The influence of the pixel architecture for two different cases is also analyzed: One setup reproduces the typical 3 transisor APS pixel architecture behavior, in which the bias voltage of the diode varies with the photogenerated charge while the second setup keeps a constant bias voltage applied to the diode by using a charge integrator.

The influence of the light-induced defect creation on the performance of the sensors is also presented and discussed.

Keywords

sensoramorphousSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A12-03
Copyright
Copyright © Materials Research Society 2007

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