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Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

Published online by Cambridge University Press:  01 February 2011

Yahya Alivov ,
Xiao Bo ,
Fan Qian ,
Daniel Johnstone ,
Cole Litton  and
Hadis Morkoç
Yahya Alivov
Affiliation:
yialivov@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Xiao Bo
Affiliation:
xiaob@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Fan Qian
Affiliation:
fanq@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
Daniel Johnstone
Affiliation:
djohnstone@semetrol.com, SEMETROL, Chesterfield, VA, 23838, United States
Cole Litton
Affiliation:
Cole.Litton@sbcglobal.net, Retired, Air Force Research Laboratory (AFRL/MLPS), Dayton, OH, 45433, United States
Hadis Morkoç
Affiliation:
hmorkoc@vcu.edu, Virginia Commonwealth University, Electrical Engineering, 601 W. Main Street, Richmond, VA, 23284, United States
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Abstract

The conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

Keywords

II-VIsputteringelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K10-21
Copyright
Copyright © Materials Research Society 2007

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References

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