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A Trial for Micro-Scale Evaluation of Adhesion Strength around Cu Metallization Systems

Published online by Cambridge University Press:  01 February 2011

Shoji Kamiya ,
Hitoshi Arakawa ,
Hiroshi Shimomura  and
Masaki Omiya
Shoji Kamiya
Affiliation:
kamiya.shoji@nitech.ac.jp, Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, N/A, Japan, 0527355324, 0527355324
Hitoshi Arakawa
Affiliation:
b1516605@edsys.center.nitech.ac.jp, Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Hiroshi Shimomura
Affiliation:
18416553@stn.nitech.ac.jp, Nagoya Institute of Technology, Department of Mechanical Engineering, Gokiso-cho, Showa-ku, Nagoya, 446-8555, Japan
Masaki Omiya
Affiliation:
oomiya@mech.keio.ac.jp, Keio University, Department of Mechanical Engineering, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama, 223-8522, Japan
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Abstract

Adhesion strength of the interface between Cu film and SiCN cap layer for IC metallization system was evaluated by a technique developed by the authors. In this technique, microscopic specimens with the in-plane dimension less than 10 μm were fabricated by focused ion beam system and loaded directly by a sharp diamond stylus with submicron tip radius. By comparing the crack extension behavior with the three-dimensional numerical simulation, the interface adhesion energy was evaluated to be 5 J/m2. The same interface was subjected also to the four-point bending experiment, which is widely applied to interface adhesion measurement. The evaluation results by the two techniques agreed reasonably well with each other.

Keywords

adhesionthin filmelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 990: Symposium B – Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics , 2007 , 0990-B10-04
Copyright
Copyright © Materials Research Society 2007

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References

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