Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-14T17:50:29.638Z Has data issue: false hasContentIssue false
  • English
  • Français

Two - Color Mid-Infrared Spectroscopy of Isoelectronic Centers in Silicon

Published online by Cambridge University Press:  10 February 2011

N.Q. Vinh  and
T. Gregorkiewicz
N.Q. Vinh
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, The Netherlands.
T. Gregorkiewicz
Affiliation:
Van der Waals - Zeeman Institute, University of Amsterdam, The Netherlands.
Get access

Abstract

One of the open questions in semiconductor physics is the origin of the small splittings of the excited states of bound excitons in silicon. A free electron laser as a tunable source of the mid-infrared radiation (MIR) can be used to investigate such splittings of the excited states of optical centers created by transition metal dopants in silicon. In the current study, the photoluminescence from silver and copper doped silicon is investigated by two color spectroscopy in the visible and the MIR. It is shown the PL due recombination of exciton bound to Ag and Cu is quenched upon application of the MIR beam. The time-resolved photoluminescence measurements and the quenching effects of these bands are presented. By scanning the wavelength of the free-electron laser ionization spectra of relevant traps involved in photoluminescence are obtained. The formation and dissociation of the bound excitons, and the small splittings of the effective-mass excited states are discussed. The applied experimental method allows correlation of DLTS data on trapping centers to specific channels of radiative recombination. It can be applied for spectroscopic analysis in materials science of semicondutors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003 , I4.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Olajos, J., Kleverman, M., and Grimmeiss, H.G., Phys. Rev. B 38 10633 (1988).Google Scholar
2. Svensson, J.H., Monemar, B., and Janzen, E., Phys. Rev. Lett. 65 1796 (1990).Google Scholar
3. Nazare, M.H., Carmo, M.C., and Duarte, A.J., Mater. Sci. Eng. B 4 273 (1989).Google Scholar
4. Iqbal, M. Zafar, Davies, Gordon, and Lightowlers, E.C., Mat. Sci. Forum, 143-147, 773 (1994).Google Scholar
5. Vinh, N.Q., Gregorkiewicz, T., and Thonke, K., Phys. Rev. B 65 033202 (2002).Google Scholar
6. Weber, J., Bauch, H., and Sauer, R., Phys. Rev. B 25 7688 (1982).Google Scholar
7. McGuigan, K.G.,Henry, M.O., Lightowlers, E.C., Steele, A.G., and Thewalt, M.L.W., Solid State Commun. 68 7 (1988).Google Scholar