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Two-dimensional Epitaxial Growth of Strained InGaAs on GaAs (001)

Published online by Cambridge University Press:  11 February 2011

Hong Wen ,
Zhiming Wang  and
G.J. Salamo
Hong Wen
Affiliation:
MRSEC and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Ar 72701, U.S.A.
Zhiming Wang
Affiliation:
MRSEC and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Ar 72701, U.S.A.
G.J. Salamo
Affiliation:
MRSEC and Microelectronics-Photonics Program, University of Arkansas, Fayetteville, Ar 72701, U.S.A.
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Abstract

Molecular beam epitaxy growth of lattice mismatched In0.53Ga0.47As / GaAs(100) system is studied by in situ scanning tunneling microscope (STM) and reflection high energy electron diffraction. InGaAs layers with a thickness ranging up to 250 nm do not exhibit a smooth surface when grown under In-rich conditions. RHEED and STM confirm the well-ordered (4×2) reconstruction and mono-layer steps associated with this unique planar growth mode. Large STM scans reveal a characteristic morphology of rectangular shaped islands distributed on large flat terraces which are typically more than 300 nm width but only mono-layer steps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , F3.19
Copyright
Copyright © Materials Research Society 2003

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References

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