Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-14T05:17:21.592Z Has data issue: false hasContentIssue false

Use of Optical Emission Spectroscopy as a Diagnostic Technique for Plasma Deposition of Hydrogenated Amorphous Silicon and Carbon

Published online by Cambridge University Press:  15 February 2011

F. J. Kampas*
Affiliation:
Division of Metallurgy and Materials Science, Brookhaven National Laboratory, Upton, New York 11973
Get access

Abstract

Optical emission intensities have been measured as a function of composition for silane-argon and silane-hydrogen mixtures used in the deposition of hydrogenated amorphous silicon. It was found that changes in silane fraction have a large effect on the electron concentration and energy distribution in the discharge.

Type
Research Article
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Haller, I., J. Vac. Sci. Technol. A 1, 1376 (1983)Google Scholar
2. Kampas, F.J., J. Appl. Phys. 54, 2276 (1983)Google Scholar
3. Kampas, F.J. and Griffith, R.W., J. Appl. Phys. 52, 1285 (1981)Google Scholar
4. Perrin, J. and Schmitt, J.P.M., Chem. Phys. 67, 167 (1982)Google Scholar
5. Donohue, D.E., Schiavone, J.A., and Freund, R.S., J. Chem. Phys. 67, 769 (1977)Google Scholar
6. Coburn, J.W. and Chen, M., J. Appl. Phys. 51, 3134 (1980)Google Scholar
7. de Rosny, G., Mosburg, E.R. Jr., Abelson, J.R., Devaud, G., and Kerns, R.C., J. Appl. Phys. 54, 2272 (1983)Google Scholar
8. Kushner, M.J., J. Appl. Phys. 53, 2939 (1982)Google Scholar