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Visible Photoluminescence from Silicon Nanoconstrictions formed by Heavy Hydrogen Implantation and Annealing Treatments

Published online by Cambridge University Press:  28 February 2011

L. Pavesi ,
D. Bisero ,
F. Corni ,
S. Frabboni ,
R. Tonini  and
G. Ottaviani
L. Pavesi
Affiliation:
Dip. di Fisica, Università di Trento, via Sommerive 14, I-38050 Povo, Italy
D. Bisero
Affiliation:
Dip. di Fisica, Università di Trento, via Sommerive 14, I-38050 Povo, Italy
F. Corni
Affiliation:
Dip. di Fisica, Università di Modena, via Campi 213/a, I-41100 Modena, Italy.
S. Frabboni
Affiliation:
Dip. di Fisica, Università di Modena, via Campi 213/a, I-41100 Modena, Italy.
R. Tonini
Affiliation:
Dip. di Fisica, Università di Modena, via Campi 213/a, I-41100 Modena, Italy.
G. Ottaviani
Affiliation:
Dip. di Fisica, Università di Trento, via Sommerive 14, I-38050 Povo, Italy
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Abstract

Ion implanted crystalline Si samples show luminescence (PL) in the visible at cryogenic temperatures after annealing treatments. This phenomenon is studied by varying the ion fluences and the sample doping density, and it is discussed considering the damage caused by the H implantation and its evolution with thermal treatments. A working hypothesis about the PL has been formulated which considers the exciton localisation in nanoconstrictions formed in the regions among the different microvoids produced by the implantation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 358: Symposium F – Microcrystalline and Nanocrystalline Semiconductors , 1994 , 157
Copyright
Copyright © Materials Research Society 1995

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References

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