Hostname: page-component-745bb68f8f-d8cs5 Total loading time: 0 Render date: 2025-01-15T07:12:50.129Z Has data issue: false hasContentIssue false
  • English
  • Français

Wafer Bonding between Magnetic Garnet and Lithium Niobate for Semi-Leaky Isolator

Published online by Cambridge University Press:  21 March 2011

Hideki Yokoi ,
Tetsuya Mizumoto  and
Masafumi Shimizu
Hideki Yokoi
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 JAPAN, yokoi@wave.pe.titech.ac.jp
Tetsuya Mizumoto
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
Masafumi Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552, JAPAN
Get access

Abstract

A semi-leaky isolator composed of a magneto-optic / anisotropic waveguide was fabricated by wafer bonding technique. Characteristics of the semi-leaky isolator were investigated. The magneto-optic / anisotropic waveguide exhibited the semi-leaky characteristics. The isolation ratio of 7.2 dB/cm was obtained at a wavelength of 1.55 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.17
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Yamamoto, S., Okamura, Y. and Makimoto, T., IEEE. J. Quantum Electron. QE–12, 764 (1976).Google Scholar
[2] Kirsch, S., Biolsi, W. A., Blank, S. L., Tien, P. K., Martin, R. J., Bridenbaugh, P. M. and Grabbe, P., J. Appl. Phys. 52, 3190 (1981).Google Scholar
[3] Yokoi, H., Mizumoto, T., Maru, K. and Naito, Y., Electron. Lett. 31, 1612 (1995).Google Scholar
[4] Yokoi, H., Mizumoto, T., Shimizu, M., Waniishi, T., Futakuchi, N., Kaida, N. and Nakano, Y., Jpn. J. Appl. Phys. 38, 4780 (1999).Google Scholar
[5] Gomi, M., Satoh, S. and Abe, M., Jpn. J. Appl. Phys. 27, L1536 (1988).Google Scholar
[6] Shintaku, T. and Uno, T., J. Appl. Phys. 76, 8155 (1994).Google Scholar
[7] Shintaku, T. and Uno, T., Jpn. J. Appl. Phys. 35, 4689 (1996).Google Scholar