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Wafer-fused n-AlGaAs/p-GaAs/n-GaN Heterojunction Bipolar Transistor with uid-GaAs Base-Collector Setback

Published online by Cambridge University Press:  01 February 2011

Sarah Estrada ,
James Champlain ,
Chad Wang ,
Andreas Stonas ,
Larry Coldren ,
Steven DenBaars ,
Umesh Mishra  and
Evelyn Hu
Sarah Estrada
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
James Champlain
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Chad Wang
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Andreas Stonas
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Larry Coldren
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Steven DenBaars
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Umesh Mishra
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
Evelyn Hu
Affiliation:
Departments of Materials and Electrical & Computer Engineering, University of California, Santa Barbara, California93106–5050
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Abstract

Recently we reported the first AlGaAs-GaAs-GaN heterojunction bipolar transistor (HBT), a device that potentially combines the high-breakdown voltage of an n-GaN collector with the high mobility of an AlGaAs-GaAs emitter-base. Because of the high degree of lattice mismatch between GaAs (lattice constant of 5.65A) and GaN (3.19A), we formed these devices through wafer fusion, also called direct wafer bonding. Measurements on the first generations of wafer fused HBTs revealed good current modulation, with modest output current (0.83 KA/cm2) and a current gain of 1.2. Limitations to the current gain may be related to traps and defects introduced by the fusion process, or may be a consequence of the natural conduction band offset between GaAs and GaN, which is not well known. This paper describes our new HBT structure that included a thin (20nm) uid-GaAs base-collector “setback” layer. The setback layer shifted the fused GaAs-GaN interface slightly into the collector. This new HBT structure also incorporated a reduced base thickness of 100 nm. HBTs with setback layers demonstrate increased output current (1.7 KA/cm2) and increased current gain (1.9).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y10.20
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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