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Wavelength Selective Charge Storage in self-assembled InGaAs-GaAs Quantum Dots

Published online by Cambridge University Press:  11 February 2011

M. Kroutvar ,
Y. Ducommun ,
J. J. Finley ,
M. Bichler ,
G. Abstreiter  and
A. Zrenner
M. Kroutvar
Affiliation:
Walter Schottky Institut, Technische Universität München, D-85748, Garching, Germany
Y. Ducommun
Affiliation:
Walter Schottky Institut, Technische Universität München, D-85748, Garching, Germany
J. J. Finley
Affiliation:
Walter Schottky Institut, Technische Universität München, D-85748, Garching, Germany
M. Bichler
Affiliation:
Walter Schottky Institut, Technische Universität München, D-85748, Garching, Germany
G. Abstreiter
Affiliation:
Walter Schottky Institut, Technische Universität München, D-85748, Garching, Germany
A. Zrenner
Affiliation:
University Paderborn, FB6, Warburger Str. 100, 33098 Paderborn, Germany
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Abstract

We present the first demonstration of spectrally selective charge storage in self-assembled quantum dots that utilizes optical charge generation and readout of the stored charge distribution. Resonant optical excitation charges only a sub-ensemble of the inhomogeneous broadened dots. The optical readout process directly recovers the spectral distribution of stored charges. Wavelength selectivity is demonstrated in a two-color experiment exhibiting charge storage in two independent QD sub-ensembles. Resonant charge storage is observed at least up to 85K depending on excitation energy. Lack of time evolution of the spectral emission indicates charge storage times Δt much longer than 25μs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 737 , 2002 , E6.3
Copyright
Copyright © Materials Research Society 2003

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References

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