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X-Ray Photoelectron Spectroscopy of In-Situ Fractured Reaction Bonded Silicon Nitride

Published online by Cambridge University Press:  28 February 2011

M. S. Donley ,
T. G. Stoebe  and
M. T. Thomas
M. S. Donley
Affiliation:
University of Washington, Department of Materials Science and Engineering, FB-10, Seattle, WA 98195
T. G. Stoebe
Affiliation:
University of Washington, Department of Materials Science and Engineering, FB-10, Seattle, WA 98195
M. T. Thomas
Affiliation:
Battelle - Pacific Northwest Laboratories, Deptartment of Materials Science and Technology, PO Box 999, Richland, WA 99352
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Abstract

The grain boundary chemistry of reaction bonded silicon nitride (RBSN) and the effects of iron species and content on this chemistry are investigated using X-ray photoelectron spectroscopy (XPS). Data are reported for semiconductor grade RBSN, Fe-doped semiconductor grade RBSN, and metallurgical grade RBSN specimens. Results indicate that the grain boundaries have an elemental composition of Si, N, O, and C, with important chemical differences depending on the purity of the starting material. In the RBSN made from metallurgical grade silicon, the grain boundaries have a distinct “oxide-like” layer, with a subregion of Si3N4. No distinct oxide layer was observed in the RBSN made from semiconductor-grade silicon, where the O appears to be uniformly incorporated into the Si3N4.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 489
Copyright
Copyright © Materials Research Society 1986

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