Hostname: page-component-cd9895bd7-8ctnn Total loading time: 0 Render date: 2024-12-26T22:36:28.219Z Has data issue: false hasContentIssue false
  • English
  • Français

D041 High Resolution X-ray Diffraction Studies of Epitaxially Grown GaN/SiC(0001) - Growth Conditions, Defect Density and Stress

Published online by Cambridge University Press:  20 May 2016

N. Faleev ,
H. Temkin ,
I. Ahmad ,
M. Holtz  and
Yu. Melnik
N. Faleev
Affiliation:
Texas Tech University, Lubbock, TX
H. Temkin
Affiliation:
Texas Tech University, Lubbock, TX
I. Ahmad
Affiliation:
Texas Tech University, Lubbock, TX
M. Holtz
Affiliation:
Texas Tech University, Lubbock, TX
Yu. Melnik
Affiliation:
TDI, Inc., Gaithersburg, MD
Get access Rights & Permissions [Opens in a new window]

Abstract

An abstract is not available for this content so a preview has been provided. Please use the Get access link above for information on how to access this content.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Denver X-Ray Conference
Information
Powder Diffraction , Volume 18 , Issue 2 , June 2003 , pp. 173
Copyright
Copyright © Cambridge University Press 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)