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Growth kinetics of Cu2ZnSnS4 thin films and powders

Published online by Cambridge University Press:  14 November 2013

M. Müller
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569 Stuttgart, Germany
C. L. Azanza Ricardo
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy
R. Di Maggio
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy
P. Scardi
Affiliation:
Department of Civil, Environmental and Mechanical Engineering, University of Trento, via Mesiano 77, 38123 Trento, Italy

Abstract

The growth kinetics of Cu2ZnSnS4 thin films and powders was studied using in-situ synchrotron data. Isothermal and isochronal measurements were performed at the MCX beamline of the Elettra synchrotron (Trieste, Italy). Diffraction line profile analysis was used to follow the changes in the domain size distribution during isothermal measurements, and the change in the mean volume of the domains was studied using the Johnson-Mehl-Avrami equation. The growth was found to be diffusion controlled from small dimensions while the nucleation rate is temperature dependent. An activation energy of 210 kJ/mol could be estimated. In case of the isochronal data, the evolution of inverse of the integral breadth of the diffraction peaks in dependence on temperature was studied using the Ozawa and Šatava equations. The activation energy determined for the growth process is between 112(2) and 145(5) kJ/mol.

Type
Technical Articles
Copyright
Copyright © International Centre for Diffraction Data 2013 

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