The paper studies the convergence behavior ofMonte Carlo schemes for semiconductors.A detailed analysis of the systematic error with respect to numerical parameters is performed.Different sources of systematic error are pointed out andillustrated in a spatially one-dimensional test case.The error with respect to the number of simulation particlesoccurs during the calculation of the internal electric field.The time step error, which is related to the splitting of transport andelectric field calculations, vanishes sufficiently fast.The error due to the approximation of the trajectories ofparticles depends on the ODE solver used in the algorithm.It is negligible compared to the other sources of time steperror, when a second order Runge-Kutta solver is used. The error related to the approximate scattering mechanismis the most significant source of error with respect to the time step.
