This paper presents a theoretical and experimental analysis of the capabilities of the dual-input Doherty power amplifier (DPA) architecture to mitigate efficiency and output power degradations when used in a mismatched load environment. Following a simplified linear piecewise approach, an analytical demonstration is proposed to derive optimal radio frequency drives applied to the Auxiliary path of the DPA to restore power performances while avoiding large signal voltage clipping of active cells. The proposed analytical study is corroborated with harmonic balance simulated results of a C-band, 20-W GaN DPA prototype. The fabricated dual-input DPA prototype has been measured under 1.5-VSWR mismatch configurations to validate the proposed analysis.

This paper discusses the determination of key electrical parameters of AlInN/(AlN)/GaN heterostructures from capacitance–voltage (CV) measurements. These heterostructures gained recently importance since they allow for high electron mobility transistor (HEMT) devices with several remarkable records: densities of the 2D electron gas (2DEG) of 2.6 × 1013 cm−2 for lattice-matched (LM) heterostructures and barrier thickness of 14 nm, beyond 2 A/mm saturation currents, above 100 GHz operation for heterostructures grown on Si (111) with gate length of 0.1 µm. Despite these striking experimental results, a consistent determination of the most important electrical parameters, namely polarization sheet charge density, surface potential, and dielectric constant of the alloy are still missing. By setting up the correct charge balance equation, these parameters can unambiguously be determined. For instance, in the case of nearly LM Al0.85In0.15N these parameters amount to σAl0.85In0.15N/GaN ~ 3.7 × 1017 m−2, eΦS ~ 3 eV and ɛAl0.85In0.15N ~11.2, for the charge density, the surface barrier potential, and the dielectric constant, respectively.