In this paper, two high efficiency monolithic microwave integrated circuits (MMICs) are demonstrated using NANOTAM's in-house Ka-band fabrication technology. AlGaN/GaN HEMTs with 0.2 ${\rm \mu}$m gate lengths are characterized, and an output power density of 2.9 W/mm is achieved at 35 GHz. A three-stage driver amplifier MMIC is designed, which has a measured gain higher than 19.3 dB across the frequency band of 33–36 GHz. The driver amplifier exhibits 31.9 dB output power and 26.5% power-added efficiency (PAE) at 35 GHz using 20 V supply voltage with 30% duty cycle. Another two-stage MMIC is realized as a power amplifier with a total output gate periphery of 1.8 mm. The output power and PAE of the power amplifier are measured as 3.91 W and 26.3%, respectively, at 35 GHz using 20 V supply voltage with 30% duty cycle. The high efficiency MMICs presented in this paper exhibit the capabilities of NANOTAM's 0.2 $\rm\mu$m AlGaN/GaN on SiC technology.

A waveguide power divider based on ridge waveguide to microstrip line transition is presented in this paper. To improve the isolation performance, a probe insulator is inserted into the contact face from the center of the waveguide side wall, also two chip resistors are mounted on a planar substrate and connected with the probe to absorb the coupled energy. The impedance transformation is accomplished by ridge waveguide to microstrip line transition, which is hidden in the waveguide. This proposed power divider shows merits of waveguide power dividers and substrate-integrated waveguide power dividers simultaneously, i.e. planar output ports, compact size, and high isolation. For verification, a power divider operating at the Ka-band is simulated, fabricated, and measured. The obtained results show the return loss and isolation are better than 10 and 20 dB, respectively. The measured insertion loss is <1.5 dB, including the insertion loss of waveguide to microstrip line transitions at the output port in the range of 34.6–39 GHz.

This contribution describes the design and simulations of a multibeam 1.8 m parabolic reflectarray antenna for geostationary high throughput satellites (HTS) in Ka-band. The parabolic reflectarray generates two orthogonal circularly polarized beams per feed simultaneously at 19.7 and 29.5 GHz, by the variable rotation technique. The antenna is made of 62 654 reflectarray cells, which include two types of printed elements independently rotated and adjusted. The elements have been optimized one by one to ensure the required phase-shift at each frequency. A novel design approach has made it possible to promptly obtain an initial layout of every element with a very low computational cost. The simulated radiation patterns show that the parabolic reflectarray, illuminated by 27 dual-circularly polarized feeds, can generate 54 spot-beams in two orthogonal polarizations, with a beam spacing of 0.56° between adjacent beams. The design and simulation tools have been validated by a parabolic reflectarray scaled in a factor of 0.5, which has been manufactured and tested. The proposed reflectarray would allow to generate a complete multi-spot coverage from a geostationary HTS with only two parabolic reflectarrays, instead of four reflector antennas, also reducing the number of feeds by half, since every feed generates two beams.