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Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination
Eva M. Campo, G. S. Cargill III, Milan Pophristic, Ian Ferguson
Journal:

Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004

Published online by Cambridge University Press:

13 June 2014, e8

Print publication:

2004
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Monochromatic CL imaging, CL spectra, WDS spectra, and EDS spectra and imaging demonstrate that electron beam bombardment of LEO-GaN causes decrease of near band edge cathodoluminescence intensity that cannot be attributed to absorption in a growing carbon contamination layer. An alternative explanation is needed, such as generation of defects, or charge injection and buildup of internal electric fields, caused by electron beam bombardment.

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Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination