A ferroelectric memory diodes that consists of Au/Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12/p-Si multilayer configuration was fabricated by pulsed laser deposition (PLD) technique. The ferroelectric properties and the electrical characteristics of the ferroelectric film system were investigated. The polarization-voltage curve of Pb(Zr0.52Ti0.48)O3/Bi4Ti3O12 thin films system had an asymmetry hysteresis loop with Pr=20μC/cm2 and Ec=48 kV/cm, and the decay in remnant polarization was only 10% after 109 switching cycles. The C-V curve and the I-V curve showed memory effects derived from the ferroelectric polarization of PZT/BIT films. The current density was 6.7×10−8A/cm2 at a voltage of +4V, and the conductivity behavior is discussed. The results suggested that the growth of the BIT ferroelectric layer is helpful to good ferroelectric properties, fatigue and capacitance retention characteristics.
