Thin films of AlxGa1−xN (0.05 ≤ x ≤ 0.96) having smooth surfaces were deposited directly on both vicinal and on-axis 6H-SiC(0001) substrates. Cross-sectional TEM of Al0.13Ga0.87N revealed stacking faults near the SiC/Nitride alloy interface and numerous threading dislocations. EDX, AES and RBS were used to determine the compositions, which were paired with their respective CL near band-edge emission energies. A negative bowing parameter was determined. The CL emission energies were similar to the bandgap energies obtained by SE. FE-AES of the initial growth of Al0.2Ga0.8N revealed an aluminum rich layer near the interface. N-type (silicon) doping was achieved for AlxGa1−xN for 0.12 ≤ x ≤ 0.42. Al0.2Ga0.8N/GaN superlattices were fabricated with coherent interfaces. Additionally, HEMT structures using an AlN/GaN/AlN buffer structure were fabricated.
