Effect of the seed layer on Seebeck coefficient measurement of electroplated thermoelectric films was quantitatively analyzed. It is found that sheet, rather than bulk resistance of the seed layer, or more precisely its relative comparison to sheet resistance of the film, determines the effects. The analysis reveals that the seed layer’s effect can be neglected (within 1% error) only if the sheet resistance ratio [R□2(film)/R□1(seed)] is smaller than 0.01. This condition commonly requires film thicknesses of 100 μm or more, which is not practically relevant. Based on the analysis we proposed a new method that is applicable for 10 times thinner films. This approach for determining Seebeck coefficient is simple, and more importantly, electroplated films can be characterized in their statu nascendi. Finite element simulation and experiments verified the analysis.

Thermoelectric (TE) effects as a coupling between heat and charge transfer can be described on a classical level in the framework of the Onsager theory. Under isotropic and steady state conditions the conservation equations can be combined to obtain a thermal energy balance containing the temperature distribution as target function. Besides the temperature the balance equation contains material properties represented by the Seebeck coefficient S, the electrical and thermal conductivities σ and κ, respectively. For the sake of simplicity, a 1D scheme has been chosen for the analytical and numerical treatment. Performance investigations are often done within the framework of the Constant Properties Model (CPM) or based on temperature dependent material properties. In the 1D steady state, there is an alternative approach available based on spatial material profiles. Following the approach by Müller and co-workers, the temperature profile T(x) is calculated numerically within a model-free setup directly from the 1D thermal energy balance, e.g., based on continuous monotonous gradient functions for all material profiles, and independent and free variability of the material parameters S(x), σ(x), and κ(x) is assumed initially. Doing so, the optimum electrical current density can be determined from the maximum of the global performance parameter (power output P or efficiency η). We present analytical results for the performance optimization calculating P and η with linear material profiles for S(x), a constant electrical and thermal conductivity, fixed TE element length L and fixed boundary temperatures.

Considering the desirable effects of doping CdTe with heavy elements like Bi, we have grown a Cadmium Zinc Telluride (Zn=10%) ingot with Bi (doping levels ∼1014 to 1015 at/cm3) as the heavy element dopant for use as a room temperature radiation detector, using the Bridgman method. In-spite of a high bulk resitivity (∼1010?cm), and the ability to hold high electric field (>2000 V/cm), these lightly doped crystals had a poor spectral resolution for the Co-57 photo peaks and ??e measurements were so low that these measurement were not reliable. Thermo electric effect spectroscopy (TEES) and thermally stimulated current (TSC) experiments on samples C and F (single crystals close to the tip and the heel of the ingot respectively) have revealed various defect levels in the band gap. Among these defect levels, we have identified and characterized two Bi-related deep levels namely a deep donor level L5 (thermal ionization energy: 0.33[5] to 0.39[5] eV and trap cross-section: 7.1[5] × 10-17 to 2.54 [5] × 10-16 cm2), and a deep acceptor level L8 (thermal ionization energy of 0.82 [5] eV and trap cross-section of 2.59 [5] × 10-12 cm2). These levels were responsible for the observed high electrical resistivity (∼1010 ?*cm) in the CdZnTe samples. From a comparison to studies on Bi doped CdTe samples, level L8 was tentatively associated with the (0/-) transition of (BiCd- - OTe) complex, however is still under study. Since these defect levels also act as trapping centers for charge carriers, in spite of the semi-insulating behavior the samples are poor radiation detectors.

We explored the growth and characteristics of CdTe doped with Sn to heighten our understanding of the role of deep levels on electrical compensation and trapping. We demonstrated, for the first time, the strong dependence of the SnCd charge state on the Fermi-level variation (2–3kT) in high-resistivity CdTe. The concentration of deep traps for electrons was determined by the number of doubly positively charged Sn2+ atoms. Thermoelectric-effect spectroscopy and photovoltage measurements revealed the conversion of the SnCd defect from the electron SnCd2+ trap to the hole SnCd0 trap. The results agree well with the existence of a negative U-center in the SnCd0/2+ defect. We also showed that the neutral Sn defect is responsible for the near midgap C-band → bound hole radiative transitions band with a maximum at 0.76 eV.

The effects of irradiation with high-energy protons (3 MeV, up to a fluency of 1013 protons/cm2), on structural, electrical and optical properties of polycrystalline CdS and CdTe thin films have been investigated. XRD investigation has revealed that the films contain wurtzite-type CdS, (001) preferentially oriented in the growth direction, and cubic phase CdTe, respectively. The defects induced by ionizing radiations have been studied by thermally stimulated currents spectroscopy (TSC). Parameters of identified defect levels were determined and their possible origin is discussed.

The PET/x.PHB samples were polarized at different temperatures (30-250°C) under various biasing fields ranging from 40 to 200 kV/ cm. The TSD currents were obtained at a heating rate of 2 °C/min in the temperature range (15-250)°C. The TSD current spectra in general comprise of three maxima namely β, α and δ in ascending order of temperature. However number of peaks actually appearing in these spectra, their location, height and sharpness are governed by polarization/depolarization parameters as well as the value of ‘x’ in a particular sample. The β peak appearing around (110-140°C) has been recognized as a dipolar relaxation process and is due to PET rich phase. The α- peak (160-180°C) recognized as space charge process is due to PHB rich phase and cold crystallization of PET rich phase. The δ peak (190-210°C) is a melting process due to the movement of large segments leading to Smectic-E like phase. In addition PET/x.PHB also exhibit a weak low temperature dipolar relaxation process β′ peak around (30-40)°C. In the vicinity of α-relaxation a rigid amorphous phase dipolar relaxation process γ relaxation is also observed.

This paper investigates the robustness of the thermally stimulated current technique as a method to determine the density of states distribution in thin film semiconductors under a wide range of conditions. Numerical simulation is used to solve the non-linear time-dependent rate equations for free and trapped charge in systems with continuous and structured DOS profiles. We explore the derivation of energy and density scales from temperature and conductivity data. We examine for these systems the limits of the method's apparent immunity to varying conditions of strong and weak retrapping, and investigate the corrections required for variations in carrier lifetime with temperature.

Previously, we have reported our application of the zero-bias thermally stimulated current (ZBTSC) spectroscopy technique to study defect states in high-dielectric constant insulator films like tantalum oxide (Ta2O5) with much less parasitic current which can be a serious limitation for the conventional thermally stimulated current (TSC) method. However, a parasitic current can still be observed for ZBTSC because of a small parasitic temperature gradient across the sample. The thermal design of the ZBTSC system can be improved, resulting in zero-temperature-gradient ZBTSC (ZTGZBTSC) which can be used to detect deeper traps than ZBTSC.

This paper presents the first cross-plane thermoreflectance image of the temperature distribution in a thermoelectric (TE) element under bias. Using the technique of lock-in CCD thermoreflectance imaging, we can map the temperature distribution of an operational device with submicron spatial resolution and a temperature resolution of 10 mK. As such it offers a complete picture of the quasi-equilibrium transport within the device. The submicron resolution of the thermoreflectance image enables clear determination of localized heating due at interfaces - for example to due contact resistance - and thermal impedance mismatch within samples. The high spatial resolution is ideal for the characterization of thin-film thermoelectric materials where data from conventional techniques (such as the transient Harman method) are difficult to interpret. This paper also presents the first thermoreflectance data we are aware of for BiTe-based material systems. Identification and separation of the Peltier and Joule components of the heating are possible, and finite difference simulations of the devices are presented for comparison with experiment. In this way it is possible to simultaneously acquire information about the Seebeck coefficient, electrical conductivity, and thermal conductivity of the thermoelectric material. The measurements demonstrate the feasibility of non-contact thermal measurements at the sub-micron scale.