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2 results

  • Internal Electric Field Profiling of 2D P-N Junctions of Semiconductor Devices by 4D STEM and Dual Lens Electron Holography

  • Yun-Yu Wang, Renliang Yuan, Shixin Wang, Zhouguang Wang, Qiang Jin
  • Journal:
    Microscopy Today / Volume 30 / Issue 1 / January 2022
    Published online by Cambridge University Press:
    31 January 2022, pp. 24-29
    Print publication:
    January 2022
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  • The internal electric field of a 2D P-N junction of a semiconductor is mapped out by two techniques: measuring the deflection of the transmitted beam in micro-STEM mode with acquisition and data fitting of an un-scattered beam image, and through the derivative of electrostatic potential maps by dual lens electron holography. Comparable results of the P-N junction internal electric field measured with these two techniques are reported.

  • Dual Lens Electron Holography, Scanning Capacitance Microscopy (SCM), Scanning Spreading Resistance Microscopy (SSRM) Comparison for Semiconductor 2-D Junction Characterization

  • Y.Y. Wang, J. Nxumalo, W. Zhao, K. Bandy, K. Nummy
  • Journal:
    Microscopy Today / Volume 29 / Issue 3 / May 2021
    Published online by Cambridge University Press:
    21 May 2021, pp. 36-44
    Print publication:
    May 2021
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  • 2-D junction characterization by dual lens electron holography, scanning capacitance microscopy (SCM), and scanning spreading resistance microscopy (SSRM) on a variety of semiconductor devices is reported, including optical modulators, regular complementary metal-oxide-semiconductor (CMOS) devices, and SiGe hetero-junction bipolar transistors. In most cases these techniques provide comparable results, while in some instances one technique has advantages over the other and vice versa. Advantages and disadvantages of each technique are discussed.