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  • Advances in Silicon Carbide Electronics

  • J. C. Zolper, M. Skowronski
  • Journal:
    MRS Bulletin / Volume 30 / Issue 4 / April 2005
    Published online by Cambridge University Press:
    31 January 2011, pp. 273-278
    Print publication:
    April 2005
    • Article
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  • After substantial investment in research and development over the last decade, silicon carbide materials and devices are coming of age. The concerted efforts that made this possible have resulted in breakthroughs in our understanding of materials issues such as compensation mechanisms in high-purity crystals, dislocation properties, and the formation of SiC/SiO2 interfaces, as well as device design and processing. The progress accomplished over the last eight years in SiC-based electronic materials is summarized in this issue of MRS Bulletin.