Historically, alloy development with better radiation performance has been focused on traditional alloys with one or two principal element(s) and minor alloying elements, where enhanced radiation resistance depends on microstructural or nanoscale features to mitigate displacement damage. In sharp contrast to traditional alloys, recent advances of single-phase concentrated solid solution alloys (SP-CSAs) have opened up new frontiers in materials research. In these alloys, a random arrangement of multiple elemental species on a crystalline lattice results in disordered local chemical environments and unique site-to-site lattice distortions. Based on closely integrated computational and experimental studies using a novel set of SP-CSAs in a face-centered cubic structure, we have explicitly demonstrated that increasing chemical disorder can lead to a substantial reduction in electron mean free paths, as well as electrical and thermal conductivity, which results in slower heat dissipation in SP-CSAs. The chemical disorder also has a significant impact on defect evolution under ion irradiation. Considerable improvement in radiation resistance is observed with increasing chemical disorder at electronic and atomic levels. The insights into defect dynamics may provide a basis for understanding elemental effects on evolution of radiation damage in irradiated materials and may inspire new design principles of radiation-tolerant structural alloys for advanced energy systems.

The macroscopic properties of materials exposed to irradiation are determined by radiation damage effects which occur on the nanoscale. These phenomena are complex dynamic processes in which many competing mechanisms contribute to the evolution of the microstructure and thus to its end-state. To explore and understand the behavior of existing materials and to develop new technologies, it is highly advantageous to be able to observe the microstructural effects of irradiation as they occur. Transmission electron microscopy with in situ ion irradiation is ideally suited to this kind of study. This review focuses on some of the important factors in designing this type of experiment including sample preparation and ion beam selection. Also presented are a brief history of the development of this technique and an overview of the instruments in operation today including the latest additions.

Measurements of stress evolution during low-energy argon ion bombardment of Si have been made using a real-time wafer curvature technique. During irradiation, the stress reaches a steady-state compressive value that depends on the flux and energy. Once irradiation is terminated, the measured stress relaxes slightly in a short period of time to a final value. To understand the ion-induced stress evolution and relaxation mechanisms, we account for the measured behavior with a model for viscous relaxation that includes the ion-induced generation and annihilation of flow defects in an amorphous Si surface layer. The analysis indicates that bimolecular annihilation (i.e., defect recombination) is the dominant mechanism controlling the defect concentration both during irradiation and after the cessation of irradiation. From the analysis, we determine a value for the fluidity per flow defect.

We report controlled modifications in the semiconductor-to-metal transition characteristics of VO2 single-crystal thin films induced by swift heavy ion (SHI) irradiation with varying ion fluences. At very high energies of ions (200 MeV Au), the electronic stopping (∼2009 eV/Å) dominates over nuclear stopping (∼16 eV/Å). Under these extreme electronic excitation conditions caused by electronic stopping and the passage of SHIs through the entire thickness of the film, creation of certain unique type of defects and disordered regions occurs. X-ray diffraction, Raman spectroscopy, infrared transmission spectroscopy, x-ray photoelectron spectroscopy (XPS), and electrical measurements were performed to investigate the characteristics and role of these defects on structural, optical, and electrical properties of VO2 thin films. XPS and electrical resistivity measurements suggest that the ion irradiation induces localized defect states that appear to correlate well with the creation of disordered regions in the VO2 thin films. The high-energy heavy-ion irradiation changes the transition characteristics drastically from a first-order to a second-order transition (electronic—Mott type). The low-temperature conductance data for these ion-irradiated films fit well with the quasiamorphous model for resistivity of VO2, where ion irradiation is believed to create mid-bandgap defect states.

Oxygen vacancy-related surface defects on porous TiO2 films were reduced by oxygen ion-beam treatment, and the effect of such defects on the performance of dye-sensitized solar cells was examined. An oxygen ion-beam treatment of a TiO2 film caused a significant decrease in particle agglomeration and an increase in surface area of the resulting TiO2 film. In addition, the increased hydrophilicity of the TiO2 film by the ion beam treatment led to an increase in dye adsorption. The oxygen ion beam treatment at 500 and 1000 eV caused a significant decrease in oxygen vacancies and increase in the open-circuit voltage (Voc). Oxygen ion beam–treated TiO2 film electrodes showed the maximum solar-to-electricity conversion efficiency (η%) of 8.04% compared to the 6.15% obtained from an untreated TiO2 electrode.

The present work reports on the conditions of nanoparticle growth and splitting under energetic ion irradiation. Cohesive energy that determines the thermal stability of a given nanoparticle system was calculated by extending surface area difference (SAD) and liquid drop model (LDM). Based on the size-dependent cohesive energy calculations, the interparticle coalescence mechanism is discussed for a ZnS-based nanoparticle system with special reference to a variety of matrices. The interparticle separation is found to play key role in particle–particle coalescence leading to nanoparticle growth or partial evaporation that results in splitting.

Solid-state nuclear magnetic resonance (NMR) spectroscopy has been employed to characterize a variety of phenomena that are central to the functioning of lithium and lithium-ion batteries. These include Li insertion and de-insertion mechanisms in carbonaceous and other anode materials and in transition-metal oxide cathodes, and ion-transport mechanisms in polymer and gel electrolytes. Investigations carried out over the last several years by the authors and other groups are reviewed in this article. Results for lithium manganese oxide spinel cathodes, carbon-based and SnO anodes, and polymer and gel electrolytes are discussed.