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Influence of thermal expansion on the lattice parameter of silicon a)
Fengchao Liu
Journal:

Powder Diffraction / Volume 9 / Issue 4 / December 1994

Published online by Cambridge University Press:

10 January 2013, pp. 260-264
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Considering the thermal expansion of silicon at ambient conditions, the lattice parameter will change 0.00032 Å for a 10 °C range. This range is measurable with modern diffraction instrumentation illustrating the importance of knowing the accurate lattice parameter, the temperature of measurement, and the thermal expansion coefficient. The best value for the expansion coefficient is 2.45×10−6/°C.

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Influence of thermal expansion on the lattice parameter of silicona)

Influence of thermal expansion on the lattice parameter of silicon a)