Two recent developments in X-ray spectrometer technology provide
dramatic improvements in analytical capabilities that impact the frontiers
of electron microscopy. Silicon drift detectors (SDD) use the same physics
as silicon (lithium) energy dispersive spectrometers [Si(Li)
EDS] but differ in design: only 10% of the thickness of the Si(Li)
EDS with an anode area below 0.1 mm2 and a complex rear surface
electrode pattern that creates a lateral internal charge collection field.
The SDD equals or betters the Si(Li) EDS in most measures of performance.
For output versus input count rate, the SDD exceeds the Si(Li) EDS by a
factor of 5 to 10 for the same resolution. This high throughput can
benefit analytical measurements that are count limited, such as X-ray
mapping and trace measurements. The microcalorimeter EDS determines the
X-ray energy by measuring the temperature rise in a metal absorber.
Operating at 100 mK, the microcalorimeter EDS achieves resolution of
2–5 eV over a photon energy range of 200 eV to 10 keV in energy
dispersive operation, eliminating most peak interference situations and
providing high peak-to-background to detect low fluorescence yield peaks.
Chemical bonding effects on low energy (<2 keV) peak shapes can be
measured.