Skip to main content Accessibility help

We use cookies to distinguish you from other users and to provide you with a better experience on our websites. Close this message to accept cookies or find out how to manage your cookie settings.

Close cookie message
×
  1. Home
  2. Search

Refine search

Refine search

Access:
Content type:
Publication date:
Apply   From and To filters
Subject: Show more
Journals Show more
Publishers: Show more
Societies Show more
Series: Show more
Collections: Show more

Actions for selected content:

Select all | Deselect all
  • View selected items
  • Export citations
  • Download PDF (zip)
  • Save to Kindle
  • Save to Dropbox
  • Save to Google Drive

Save Search

You can save your searches here and later view and run them again in "My saved searches".

Please provide a title, maximum of 40 characters.
Cancel
×

1 results

  • GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors

  • O. Schoen, D. Schmitz, M. Heuken, Holger Juergensen, M. D. Bremser
  • Journal:
    Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
    Published online by Cambridge University Press:
    13 June 2014, e38
    Print publication:
    1998
    • Article
      • You have access
    • PDF
    • HTML
    • Export citation

  • Using optimised growth processes for an AIX 2000 HT Planetary® Reactor a high material quality and high potential device yield are demonstrated. Doping levels for GaN single layers from 1·1020 cm−3 free electrons to semi-insulating to 1·1018 cm−3 free holes with state-of-the-art layer resistance uniformities especially for n-type layers are shown. Both AlGaN and GaInN with composition homogeneities of better than 1 nm photoluminescence peak-wavelength standard deviation are displayed. Finally, examination of optically pumped laser action in simple double-hetero structures is quoted to prove the quality of the material.