In this work, SnS1−xSex ternary nanobelts were synthesized by a facile hydrothermal method without the assistance of surfactants. The structure, morphology, microstructure, compositions, chemical valences, phonon modes, and optical band gaps of the SnS1−xSex nanobelts were characterized in detail. The results indicate that the SnS1−xSex nanobelts have uniform one-dimensional morphology and are single crystals with high crystallinity. Se is incorporated into the SnS lattice to substitute for S-forming ternary SnS1−xSex alloy. With the increase of Se doping concentration, the optical band gaps of the nanobelts gradually decrease from 1.15 to 1.01 eV, confirming the tunable optical property achieved here.

In this article, two simple methods, evaporation-condensation and catalytic thermal evaporation, were used to investigate the synthesis of CdS nanostructures for nanoscale optoelectronic applications. To understand their growth mechanisms, various electron microscopy and microanalysis techniques were utilized in characterizing their morphologies, internal structures, growth directions and elemental compositions. The electron microscopy study reveals that when using the evaporation-condensation method, branched CdS nanorods and self-assembled arrays of CdS nanorods were synthesized at 800°C and 1000°C, respectively. Instead of morphological differences, both types of CdS nanorods grew along the [0001] direction. However, when using the catalytic thermal evaporation method (Au as the catalyst), patterned CdS nanowires and nanobelts were formed at the temperature region of 500–600°C and 600–750°C, respectively. Their growth direction was along the direction [1010] instead of [0001]. Based on the microscopy and microanalysis results, we propose some growth mechanisms in relation to the growth processes of those exotic CdS nanostructures.