We discuss the application of ion microscopy and in situ electron
microscopy to the study of electronic and optical materials and devices.
We demonstrate how the combination of in situ transmission electron
microscopy and focused ion beam microscopy provides new avenues for the
study for such structures, enabling extension of these techniques to the
study of dopant distributions, nanoscale stresses, three-dimensional
structural and chemical reconstruction, and real-time evolution of defect
microstructure. We also discuss in situ applications of thermal,
mechanical, electrical, and optical stresses during transmission electron
microscopy imaging.