Recent discoveries of multicomponent concentrated solid-solution alloys hold promise for enhanced properties—such as enhanced mechanical properties, radiation tolerance, high temperature strength, corrosion resistance and some novel functional properties, provide a new strategy for alloy design using extreme disorder. Yet, deep understanding of these intriguing properties is complicated by the very effects of disorder that make them interesting. All the desirable properties of these alloys ultimately originate from the disorder-induced properties of underlying electronic structure, lattice dynamics, and thermodynamics. Therefore, understanding the disorder-induced fundamental physical properties is prerequisite for the science-based design of this class of alloys for practical applications. Here, we elucidate the role of extreme (maximal) substitutional disorder plays in the fundamental physics of disordered alloys and review the recently developed theoretical methodologies in modeling the basic physical properties, particularly electronic structure, magnetism, electrical transport, and lattice vibrations in multicomponent concentrated solid-solution alloys.

(Zr, Hf)NiSn-based half-Heusler alloys with refined grains were prepared by melt spinning and spark plasma sintering. The grain size of the melt-spun (MS) thin ribbons varied from ∼500 nm to ∼3 μm. X-ray diffraction analysis showed that single phased alloys were obtained. Nanoscale precipitates dispersed in the matrix could be observed in both the MS ribbons and sintered bulk samples, which increased the carrier concentration and electrical conductivity. The lattice thermal conductivity decreased by more than 20% below 100 K and 5–20% from 200 to 1000 K, compared with the levitation melted counterparts, due to the refined grain sizes. The maximum dimensionless figure of merit ZT value reached ∼0.9 for the MS Hf0.6Zr0.4NiSn0.98Sb0.02sample.

Single-walled carbon nanotubes (SWNTs) are emerging as an important new class of electronic materials. Both metallic and semiconducting SWNTs have electrical properties that rival or exceed the best metals or semiconductors known. In this article, we review recent transport and scanning probe experiments that investigate the electrical properties of SWNTs.We address the fundamental scattering mechanisms in SWNTs, both in linear response and at high bias.We also discuss the nature and properties of contacts to SWNTs. Finally, we discuss device performance issues and potential applications in electronics and sensing.