The diffusivity and diffusion mechanisms of hydrogen together with with deuterium and lithium, parallel to the c axis of quartz, were investigated experimentally at 800°C, 0.1 GPa with the activity of H2O or 2H2O ≈ 1 [2H is used throughout this work to describe deuterium rather than D, to avoid confusion with the diffusion coefficient, D]. The pH was set using mixtures of H2O (or 2H2O) and HCl. Three types of experiment were conducted: (1) H-in/Li-out; (2) 2H-in/H-out; and (3) 2H-in/H + Li out, using three different natural quartz crystals as starting materials. Profiles of H, 2H and Li were measured using Fourier-transform infrared (FTIR) spectroscopy and laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). H, 2H and Li are charge-compensated by Al3+ replacing Si4+, or by excess O2–. The total atomic concentration of monovalent cations appears to remain constant over the duration of the experiments. The resulting diffusion profiles are different for the three experimental designs and three starting materials, and some show complex shapes inconsistent with simple diffusion. A multi-site diffusion–reaction model is developed, with the theory based on previous models that have been derived mainly on the basis of conductivity measurements. In these models, the monovalent cations move away from their charge-balancing ion then diffuse rapidly to another site. The mobility of the monovalent cations is described by both a diffusion coefficient and an equilibrium constant that enables dissociation of the immobile charge-balanced defects. This model can describe complex step-shaped profiles formed in H-in/Li-out experiments, profiles with local maxima ('humped’ profiles) in 2H-in/H + Li out experiments, and error function-shaped profiles in 2H-in/H-out and previously published Li-in/H-out experiments. Our data provide support for models previously proposed for quartz. Studies of the lengths and forms of diffusion profiles from such experiments provide a useful complement to assertions from conductivity experiments.

Quartz (trigonal, low-temperature α-quartz) is the most important polymorph of the silica (SiO2) group and one of the purest minerals in the Earth crust. The mineralogy and mineral chemistry of quartz are determined mainly by its defect structure. Certain point defects, dislocations and micro-inclusions can be incorporated into quartz during crystallisation under various thermodynamic conditions and by secondary processes such as alteration, irradiation, diagenesis or metamorphism. The resulting real structure is a fingerprint of the specific physicochemical environment of quartz formation and also determines the quality and applications of SiO2 raw materials. Point defects in quartz can be related to imperfections associated with silicon or oxygen vacancies (intrinsic defects), to different types of displaced atoms, and/or to the incorporation of foreign ions in lattice sites and interstitial positions (extrinsic defects). Due to mismatch in charges and ionic radii only a limited number of ions can substitute for Si4+ in the crystal lattice or can be incorporated in interstitial positions. Therefore, most impurity elements in quartz are present at concentrations below 1 ppm. The structural incorporation in a regular Si4+ lattice site has been proven for Al3+, Ga3+, Fe3+, B3+, Ge4+, Ti4+, P5+ and H+, of which Al3+ is by far the most common and typically the most abundant. Unambiguous detection and characterisation of defect structures in quartz are a technical challenge and can only be successfully realised by a combination of advanced analytical methods such as electron paramagnetic resonance (EPR) spectroscopy, cathodoluminescence (CL) microscopy and spectroscopy as well as spatially resolved trace-element analysis such as laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS) and secondary-ion mass spectrometry (SIMS). The present paper presents a review of the state-of-the-art knowledge concerning the mineralogy and mineral-chemistry of quartz and illustrates important geological implications of the properties of quartz.

Computer simulation techniques have been used to investigate defect formation and the diffusion of Ca and Mg in diopside. It was found that isolated, non-interacting CaO and MgO Schottky defects had the lowest formation energies (3.66 and 3.97 eV respectively); oxygen Frenkel defects are the most favourable oxygen defects (formation energies 3.93 eV). Magnesium and calcium self-diffusion in the c-direction of diopside is easiest by a vacancy mechanism involving either direct jumps along the c-direction, or double jumps in the b-c plane. In the extrinsic regime, diffusion activation energies for Mg are predicted to be 9.82 eV (direct route) and 1.97 eV (double jump route); for Ca diffusion, activation energies are predicted to be 6.62 eV (direct route) and 5.63 eV (double jump route). If additional vacancies (oxygen or magnesium) are present in the vicinity of the diffusion path, Ca migration energies fall to 1.97–2.59 eV. At elevated temperatures in the intrinsic regime, diffusion activation energies of ⩾ 5.95 eV are predicted for Mg self-diffusion and 9.29–10.28 eV for Ca self-diffusion. The values for Ca diffusion are comparable with published experimental data. It is inferred that a divacancy mechanism may operate in diopside crystals.

This article reviews recent advances utilizing field-ion microscopy (FIM) to extract atomic-scale three-dimensional images of materials. This capability is not new, as the first atomic-scale reconstructions of features utilizing FIM were demonstrated decades ago. The rise of atom probe tomography, and the application of this latter technique in place of FIM has unfortunately severely limited further FIM development. Currently, the ubiquitous availability of extensive computing power makes it possible to treat and reconstruct FIM data digitally and this development allows the image sequences obtained utilizing FIM to be extremely valuable for many material science and engineering applications. This article demonstrates different applications of these capabilities, focusing on its use in physical metallurgy and semiconductor science and technology.

The compilation of measured effective rate constants for oxygen surface exchange on mixed conducting perovskites, which covers a great variety of compositions ranging from (La,Sr)MnO3−δ to (La,Sr)(Co,Fe)O3−δ and (Ba,Sr)(Co,Fe)O3−δ, demonstrates the importance of ionic conductivity—i.e., high oxygen vacancy concentration as well as vacancy mobility—as a key factor for the surface oxygen exchange rate. This interpretation is corroborated by ab initio calculations, which indicate that the approach of an oxygen vacancy to oxygen intermediates adsorbed on the surface is the rate determining step for a number of perovskites.

Native defects and some common dopants (Mg, Zn, and C) in cubic GaN and AlN are examined by means of ab initio theoretical calculations using two methods: i) the Green's function technique based on the linear muffin-tin orbital method in the atomic-spheres approximation; ii) a supercell approach in connection with the full-potential linear muffin-tin-orbital method. We apply the first method to look mainly at the energetic positions of the defect and impurity states in different charge states and their dependence on hydrostatic pressure. The second method allows us to study lattice relaxations. Whereas small relaxations are found near vacancies and substitutional Mg and Zn, the calculations predict large atomic displacements around antisite defects and the substitutional carbon impurity on the cation site.