A systematic design approach is presented for the design of broadband high-efficiency power amplifiers (PAs) by combining an improved ring-resonant filter matching network with a series of continuous modes. The improved ring-resonant matching network presented can effectively enhance out-of-band attenuation and sharp roll-off characteristics by adding a compensation structure with parallel stub. To verify the proposed design theory, a 10-W GaN HEMT device is designed and fabricated. The test results indicate that from the operating frequency band of 0.55−3.3 GHz with a relative bandwidth of 142.9%, a saturated output power of 38.5−42 dBm, drain efficiency of 58.2−70.3%, and a gain of 8.5–12 dB can be achieved under 3 dB gain compression, indicating the rationality of the design theory.

A bandwidth expansion strategy for ultra-wideband power amplifiers (PAs) is presented in this letter by adopting a parallel impedance matching architecture. This design strategy can effectively reduce the impedance conversion ratio between the load and the target impedance of the PA, thereby providing a feasible solution for broadband impedance matching. Subsequently, a commercially available 10 W gallium nitride device and a two-stage Wilkinson power divider network are combined to achieve the verification of the proposed theory. The results of the measurement show that within the target frequency band of 0.9–3.9 GHz, 58.5–71.2% of the drain efficiency and 9.1–12 dB of gain can be achieved with a saturated output power of 39.1–42 dBm.