The possible use of spin and magnets in place of charge and capacitors, respectively, to store and process information is well known. Magnetic tunnel junctions are being widely investigated and developed for magnetic random access memories. These are two terminal devices that change their resistance based on switchable magnetization of magnetic materials. They utilize the interaction between electron spin and magnets to read information from the magnets and write onto them. Such advances in memory devices could also translate into a new class of logic devices that offer the advantage of nonvolatile and reconfigurable information processing over transistors. Logic devices having a transistor-like gain and directionality could be used to build integrated circuits without the need for transistor-based amplifiers and clocks at every stage. We review device characteristics and basic logic gates that compute with spins and magnets from the mesoscopic to the atomic scale, as well as materials, integration, and fabrication challenges and methods.

The phenomenon of electron tunneling has been known since the advent of quantum mechanics, but continues to enrich our understanding of many fields of physics, as well as creating sub-fields on its own. Spin-dependent tunneling in magnetic tunnel junctions has aroused considerable interest and development. In parallel with this endeavor, recent advances in thin-film ferroelectrics have demonstrated the possibility of achieving stable and switchable ferroelectric polarization in nanometer-thick films. This discovery opened the possibility of using thin-film ferroelectrics as barriers in magnetic tunnel junctions, thus merging the fields of magnetism, ferroelectricity, and spin-polarized transport into an exciting and promising area of novel research. Nowadays, this research has become an important constituent of a broader effort in multiferroic materials and heterostructures that involves rich fundamental science and offers a potential for applications in novel multifunctional devices. The purpose of this article is to review recent developments in ferroelectric and multiferroic tunnel junctions. Starting from the concept of electron tunneling, we first discuss the key properties of magnetic tunnel junctions and then assess key functional characteristics of ferroelectric and multiferroic tunnel junctions. We discuss the recent demonstrations of giant resistive switching observed in ferroelectric tunnel junctions and the new concept of electrically controlling the spin polarization in magnetic tunnel junctions with a ferroelectric tunnel barrier.

New candidate ferromagnetic semiconductors have recently been grown by doping semiconducting transition-metal oxides with magnetic impurities. Some of these exhibit ferromagnetism at and above room temperature. The critical question is why? In many cases, complex solid-state chemistry is involved in the synthesis and drives the resulting properties. The observation of room-temperature ferromagnetism in these materials must be accompanied by a careful identification of the phases and structures present in order to accurately identify the origin of the magnetism.

Semiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.

High-throughput synthesis and characterization techniques have been effective in discovering new materials and performing rapid mapping of phase diagrams. The application of the combinatorial strategy to explore doped transition-metal oxides has led to the discovery of a transparent room-temperature ferromagnetic oxide in Co-doped anatase TiO2. The discovery has triggered a wave of studies into other metal oxide systems in pursuit of diluted magnetic semiconductors. In this article, we describe recent combinatorial studies of magnetic transition-metal oxides, germanium-based magnetic semiconductors, and Heusler alloys.

Half-metals are unusual ferromagnets that have electrons at the Fermi level in a single spin state, either spin up or spin down. Of potential interest as sources and analyzers of polarized electrons in spintronic devices, they are usually identified from spin-dependent band-structure calculations. We present a classification scheme for half-metals and then discuss methods for measuring spin polarization based on point contacts or tunnel junctions with ferromagnetic or superconducting counter electrodes. Oxide examples include CrO2, the best-studied half-metal. The half-metallicity tends to be destroyed by increasing temperature and by structural defects. The half-metals that currently offer the best prospects for spintronics applications are those with the highest Curie temperatures, such as magnetite, Fe3O4, and perhaps oxide semiconductors such as Co-doped ZnO.

This article introduces the October 2003 issue of MRS Bulletin on “New Materials for Spintronics.” As a result of quantum mechanics, the carriers in ferromagnetic metals such as Fe, Co, and Ni are spin-polarized due to an imbalance at the Fermi level in the number of spin-up and spin-down electrons. A carrier maintains its spin polarization as long as it does not encounter a magnetic impurity or interact with the host lattice by means of spin-orbit coupling. The discovery of optically induced, long-lived quantum coherent spin states in semiconductors has created a range of possibilities for a new class of devices that utilize spin. This discovery also points to the need for a wider range of spin-polarized materials that will be required for different device configurations. In this issue of MRS Bulletin, we focus on three classes of candidate spintronic materials and review the current state of our understanding of them: III–V and II–VI semiconductors, oxides, and Heusler alloys. The field of spin-polarized materials is growing very rapidly, and the search for new magnetic semiconductors and other suitable spin-injection materials with higher Curie temperatures is bringing spintronics closer to the realm of being practical.

Recent years have witnessed extensive research aimed at developing functional, tetrahedrally coordinated ferromagnetic semiconductors that could combine the resources of semiconductor quantum structures and ferromagnetic materials systems and thus lay the foundation for semiconductor spintronics. Spin-injection capabilities and tunability of magnetization by light and electric field in Mn-based III–V and II–VI diluted magnetic semiconductors are examples of noteworthy accomplishments. This article reviews the present understanding of carrier-controlled ferromagnetism in these compounds with a focus on mechanisms determining Curie temperatures and accounting for magnetic anisotropy and spin stiffness as a function of carrier density, strain, and confinement. Materials issues encountered in the search for semiconductors with a Curie point above room temperature are addressed, emphasizing the question of solubility limits and self-compensation that can lead to precipitates and point defects. Prospects associated with compounds containing magnetic ions other than Mn are presented.

Ferromagnetic materials that have Curie temperatures above room temperature, crystal structures and lattice matching compatible with compound semiconductors, and high spin polarizations show great promise for integration with semiconductor spintronics. Heusler alloys have crystal structures (fcc) and lattice parameters similar to many compound semiconductors, high spin polarization at the Fermi level, and high Curie temperatures. These properties make them particularly attractive for injectors and detectors of spin-polarized currents. This review discusses the progress and issues related to integrating full and half Heusler alloys into ferromagnetic compound semiconductor heterostructures.

This article is based on a presentation on organic-based magnets given as part of Symposium X—Frontiers of Materials Research on December 4, 2002, at the 2002 Materials Research Society Fall Meeting in Boston. The advent of organic-based magnets opened the opportunity for tuning magnetic properties by molecular design and the discovery of new phenomena that rely on the internal structure of the molecules that make up these magnets. In the past 18 years, numerous classes of organic-based ferromagnets, ferrimagnets, and spin glasses (spins essentially frozen in place without long-range order) have been reported. These materials have magnetic ordering temperatures ranging from <1 K to above room temperature and demonstrate many of the magnetic properties associated with conventional magnets. This article concentrates on new phenomena that are unique to organic-based magnets. Three of these effects—“high-temperature” light-induced magnetism, spin-polarized magnetic organic semiconductors with the potential for spintronics, and the development of fractal magnetic order—are discussed to illustrate the richness of opportunity in organic-based magnets.