Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-28T15:03:54.240Z Has data issue: false hasContentIssue false
  • English
  • Français

Chemical–mechanical polishing of copper and tantalum with silica abrasives

Published online by Cambridge University Press:  31 January 2011

Y. Li ,
M. Hariharaputhiran  and
S. V. Babu
Y. Li
Affiliation:
Department of Mechanical Engineering, Clarkson University, Potsdam, New York 13699
M. Hariharaputhiran
Affiliation:
Department of Chemical Engineering, Clarkson University, Potsdam, New York 13699
S. V. Babu
Affiliation:
Department of Chemical Engineering and Center for Advanced Materials Processing, Clarkson University, Potsdam, New York 13699
Get access

Abstract

Chemical mechanical polishing of copper and tantalum was performed using fumed amorphous silica abrasive particles dispersed in H2O2, Fe(NO3)3, and glycine solutions. Results showed that in DI water silica did not polish Cu but Ta had a relatively high polish rate. Cu polish rate decreased with increasing particle concentration in Fe(NO3)3-based slurries due to the adsorption of Fe3+ on the silica surface. Addition of H2O2 enhanced Cu polish rate but reduced Ta polish rate. The specific surface area of the particles played an important role in the removal of Ta and Cu, presumably due to some chemical bonding between the materials being polished and the silica particles.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 1066 - 1073
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Korczynski, E., Solid State Technol. August 24 (1999).Google Scholar
2.Solid State Technol. December, 72 (2000).Google Scholar
3.Luo, Q., Campbell, D.R., and Babu, S.V., Langmuir 12, 3563 (1996).CrossRefGoogle Scholar
4.Hariharaputhiran, M., Zhang, J., Ramarajan, S., Keleher, J.J., Li, Y., and Babu, S.V., J. Electrochem. Soc., 147, 3820 (2000).CrossRefGoogle Scholar
5.Hirabayashi, H., Higuchi, M., Kinoshita, M., Kaneko, H., Hayasaka, N., Mase, K., and Oshima, J., Proc. CMP-MIC Conference, Feb 22–23 (VMIC, Tampa, FL, 1996), pp. 119.Google Scholar
6.Zeidler, D., Stavreva, Z., Plotner, M., and Drescher, K., Microelectron. Eng. 33, 259 (1997).CrossRefGoogle Scholar
7.Carpio, R., Farkas, J., and Jairath, R., Thin Solid Films 266, 238 (1995).CrossRefGoogle Scholar
8.Luo, Q., Mackay, R.A., and Babu, S.V., Chem. Mater. 9, 2101 (1997).CrossRefGoogle Scholar
9.Ramarajan, S., Hariharaputhiran, M., Her, Y-S., and Babu, S.V., Surf. Eng. 15, 324 (1999).CrossRefGoogle Scholar
10.Li, Y., Ramarajan, S., Hariharaputhiran, M., Her, Y-S., and Babu, S.V., Communication E24, 2000, MRS Spring Meeting, San Francisco, CA (in press).Google Scholar
11.Cook, L.M., J. Non-Cryst. Solids 120, 152 (1990).CrossRefGoogle Scholar
12.Sivaram, S., Bath, H., Leggett, R., Maury, A., Monning, K., and Tolles, R., Solid State Technol. May, 87 (1992).Google Scholar
13.Jairath, R., Bath, H., Davis, S., Desai, M., Perry, K., and Sivaram, S., SPIE Vol. 2090 Multilevel Interconnection (SPIE, Bellingham, WA 1993), pp. 103.Google Scholar
14.Shen, J.J., Costas, W.D., and Cook, L.M., J. Electrochem. Soc. 145, 4240 (1998).CrossRefGoogle Scholar
15.Ramarajan, S., Li, Y., Hariharaputhiran, M. and Babu, S.V., J. CMP ULSI Multilevel Interconnection, 1, 28 (1999).Google Scholar
16.Hariharaputhiran, M., Li, Y., Ramarajan, S., and Babu, S.V., Electrochem. Solid-State Lett. 3, 95 (2000).CrossRefGoogle Scholar
17.Ramarajan, S., Li, Y., Hariharaputhiran, M., Her, Y.S., and Babu, S.V., Electrochem. Solid-State Lett. 3, 232 (2000).CrossRefGoogle Scholar
18.Iler, R.K., The Colloid Chemistry of Silica and Silicates (Cornell University, Ithaca, NY, 1995).Google Scholar
19.Tuel, A., Hommel, H., Legrand, A.P., Balard, H., Sidqi, M., and Papirer, E., Colloids Surf. 58, 17 (1991).CrossRefGoogle Scholar
20.Guidotti, B.R., Herzog, E., Bangerter, F., Caseri, W., and Suter, U.W., J. Colloid Interface Sci. 191, 209 (1997).CrossRefGoogle Scholar
21.Zhuravlev, L.T., Langmuir 3, 316 (1987).CrossRefGoogle Scholar
22.Voort, P.V.D., Gillis-D’Hamers, I., and Vanant, E.F., J. Chem. Soc., Faraday Trans. 86, 3751 (1990).CrossRefGoogle Scholar
23.Zaborski, M., Vidal, A., Papirier, E., and Morawski, J.C., Makromol. Chem. Macromol. Symp. 23, 307 (1989).Google Scholar
24.Luo, Q., Campbell, D.R., and Babu, S.V., Langmuir 12, 3563 (1996).CrossRefGoogle Scholar
25.Li, Y., Jindal, A., and Babu, S.V., Proceedings of the Electrochemical Society 198th Meeting, Phoenix, AZ, Oct 22–27, 2000 (Electrochemical Society, Pennington, NJ, 2000).Google Scholar