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Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110)

Published online by Cambridge University Press:  31 January 2011

Paul R. Markworth ,
R. P. H. Chang ,
Y. Sun ,
G. K. Wong  and
J. B. Ketterson
Paul R. Markworth
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
R. P. H. Chang
Affiliation:
Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60208
Y. Sun
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
G. K. Wong
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
J. B. Ketterson
Affiliation:
Department of Physics and Astronomy and Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

Continuous epitaxial films of cuprous oxide (Cu2O) have been formed by the thermal oxidation of 1.5-μm-thick Cu metal films deposited on MgO(110) substrates. These films melted at 1118 °C in air, in agreement with equilibrium phase diagrams. Upon cooling from the liquid, a highly crystalline, epitaxial, 2.5-μm-thick Cu2O film was formed. X-ray diffraction spectroscopy revealed that the Cu2O film crystal structure was orthorhombically distorted from the bulk cubic crystal structure. High-resolution transmission electron microscopy showed that the film is coherent, and energy dispersive x-ray spectroscopy showed that interdiffusion is limited to the interface. These results suggest that a new epitaxially stabilized phase of Cu2O has been formed.

Type
Articles
Information
Journal of Materials Research , Volume 16 , Issue 4 , April 2001 , pp. 914 - 921
Copyright
Copyright © Materials Research Society 2001

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